Unusual strain relaxation and Dirac semimetallic behavior in epitaxial antiperovskite nitrides

Fuente: arXiv
Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Cui, Ting, Xu, Zihan, Zhang, Qinghua, Zhang, Xiaodong, Wang, Qianying, Rong, Dongke, Choi, Songhee, Xie, Axin, Ji, Hongyun, Wang, Can, Ge, Chen, Feng, Hongjian, Wang, Shanmin, Jin, Kuijuan, Si, Liang, Guo, Er-Jia
Format: Preprint
Veröffentlicht: 2025
Schlagworte:
Online-Zugang:
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
_version_ 1866911329070088192
author Cui, Ting
Xu, Zihan
Zhang, Qinghua
Zhang, Xiaodong
Wang, Qianying
Rong, Dongke
Choi, Songhee
Xie, Axin
Ji, Hongyun
Wang, Can
Ge, Chen
Feng, Hongjian
Wang, Shanmin
Jin, Kuijuan
Si, Liang
Guo, Er-Jia
author_facet Cui, Ting
Xu, Zihan
Zhang, Qinghua
Zhang, Xiaodong
Wang, Qianying
Rong, Dongke
Choi, Songhee
Xie, Axin
Ji, Hongyun
Wang, Can
Ge, Chen
Feng, Hongjian
Wang, Shanmin
Jin, Kuijuan
Si, Liang
Guo, Er-Jia
contents Antiperovskite nitrides (X3AN) are the structural analogues to perovskite oxides, while their epitaxial growth and electronic properties remain largely unexplored. We report the successful synthesis of Ni3InN thin films on substrates with different lattice constants. First-principles phonon calculations confirm the dynamical stability of cubic phase Ni3InN, providing the basis for epitaxial synthesis. High-resolution scanning transmission electron microscopy reveals coherent (001)-oriented interfaces when Ni3InN is grown on LaAlO3 and SrTiO3, while an unexpected (011)-orientation forms on DyScO3, aligning with surface-energy predictions. Transport measurements highlight a strain-controlled Fermi-liquid behavior, correlated with variations in the Ni-3d bandwidth and hybridization. Band structure calculations reveal a dual character near the Fermi level: a high-mobility Dirac-like band and a Ni-3d manifold that drives strange-metal transport with a reduced slope compared to oxide perovskites. The formal Ni valence (+2/3) places Ni3InN in an overdoped correlated-metal regime, distinguishing from most perovskite oxides. This positions antiperovskite nitrides as a promising platform for investigating overdoped Fermi liquids and strange-metal behavior.
format Preprint
id arxiv_https___arxiv_org_abs_2512_18195
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Unusual strain relaxation and Dirac semimetallic behavior in epitaxial antiperovskite nitrides
Cui, Ting
Xu, Zihan
Zhang, Qinghua
Zhang, Xiaodong
Wang, Qianying
Rong, Dongke
Choi, Songhee
Xie, Axin
Ji, Hongyun
Wang, Can
Ge, Chen
Feng, Hongjian
Wang, Shanmin
Jin, Kuijuan
Si, Liang
Guo, Er-Jia
Materials Science
Strongly Correlated Electrons
Antiperovskite nitrides (X3AN) are the structural analogues to perovskite oxides, while their epitaxial growth and electronic properties remain largely unexplored. We report the successful synthesis of Ni3InN thin films on substrates with different lattice constants. First-principles phonon calculations confirm the dynamical stability of cubic phase Ni3InN, providing the basis for epitaxial synthesis. High-resolution scanning transmission electron microscopy reveals coherent (001)-oriented interfaces when Ni3InN is grown on LaAlO3 and SrTiO3, while an unexpected (011)-orientation forms on DyScO3, aligning with surface-energy predictions. Transport measurements highlight a strain-controlled Fermi-liquid behavior, correlated with variations in the Ni-3d bandwidth and hybridization. Band structure calculations reveal a dual character near the Fermi level: a high-mobility Dirac-like band and a Ni-3d manifold that drives strange-metal transport with a reduced slope compared to oxide perovskites. The formal Ni valence (+2/3) places Ni3InN in an overdoped correlated-metal regime, distinguishing from most perovskite oxides. This positions antiperovskite nitrides as a promising platform for investigating overdoped Fermi liquids and strange-metal behavior.
title Unusual strain relaxation and Dirac semimetallic behavior in epitaxial antiperovskite nitrides
topic Materials Science
Strongly Correlated Electrons
url https://arxiv.org/abs/2512.18195