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Main Authors: Su, Zhe, Song, Shuoran, Wang, Qi, Jiang, Jian-Hua
Format: Preprint
Published: 2025
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Online Access:https://arxiv.org/abs/2512.18757
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author Su, Zhe
Song, Shuoran
Wang, Qi
Jiang, Jian-Hua
author_facet Su, Zhe
Song, Shuoran
Wang, Qi
Jiang, Jian-Hua
contents While phonon topology in crystalline solids has been extensively studied, its influence on thermal transport-especially in nanostructures-remains elusive. Here, by combining first-principles-based machine learning potentials with the phonon Boltzmann transport equation and molecular dynamics simulations, we systematically investigate the role of topological surface phonons in the in-plane thermal transport of semiconductor thin films (Si, 4H -SiC, and c-BN). These topological surface phonons, originating from nontrivial acoustic phonon nodal lines, not only serve as key scattering channels for dominant acoustic phonons but also contribute substantially to the overall thermal conductivity. Remarkably, for these thin semiconductor films below 10 nm this contribution can be as large as over 30% of the in-plane thermal conductivity at 300 K, and the largest absolute contribution can reach 82 W/m-K, highlighting their significant role in nanoscale thermal transport in semiconductors. Furthermore, we demonstrate that both temperature and biaxial strain provide effective means to modulate this contribution. Our work establishes a direct link between topological surface phonons and nanoscale thermal transport, offering the first quantitative assessment of their role and paving the way for topology-enabled thermal management in semiconductors.
format Preprint
id arxiv_https___arxiv_org_abs_2512_18757
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Topological surface phonons modulate thermal transport in semiconductor thin films
Su, Zhe
Song, Shuoran
Wang, Qi
Jiang, Jian-Hua
Materials Science
While phonon topology in crystalline solids has been extensively studied, its influence on thermal transport-especially in nanostructures-remains elusive. Here, by combining first-principles-based machine learning potentials with the phonon Boltzmann transport equation and molecular dynamics simulations, we systematically investigate the role of topological surface phonons in the in-plane thermal transport of semiconductor thin films (Si, 4H -SiC, and c-BN). These topological surface phonons, originating from nontrivial acoustic phonon nodal lines, not only serve as key scattering channels for dominant acoustic phonons but also contribute substantially to the overall thermal conductivity. Remarkably, for these thin semiconductor films below 10 nm this contribution can be as large as over 30% of the in-plane thermal conductivity at 300 K, and the largest absolute contribution can reach 82 W/m-K, highlighting their significant role in nanoscale thermal transport in semiconductors. Furthermore, we demonstrate that both temperature and biaxial strain provide effective means to modulate this contribution. Our work establishes a direct link between topological surface phonons and nanoscale thermal transport, offering the first quantitative assessment of their role and paving the way for topology-enabled thermal management in semiconductors.
title Topological surface phonons modulate thermal transport in semiconductor thin films
topic Materials Science
url https://arxiv.org/abs/2512.18757