Signature of inverse orbital Hall effect in silicon studied using time-resolved terahertz polarimetry
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arXiv
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| Format: | Preprint |
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2025
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| author | Shirai, Ami Mi Aikyo, Kota Murotani, Yuta Fujimoto, Tomohiro Kim, Changsu Akiyama, Hidefumi Miwa, Shinji Yoshinobu, Jun Matsunaga, Ryusuke |
| author_facet | Shirai, Ami Mi Aikyo, Kota Murotani, Yuta Fujimoto, Tomohiro Kim, Changsu Akiyama, Hidefumi Miwa, Shinji Yoshinobu, Jun Matsunaga, Ryusuke |
| contents | We investigated the anomalous Hall conductivity induced in silicon by circularly polarized light at room temperature using near-infrared (NIR) pump-terahertz (THz) probe spectroscopy. The time-resolved detection scheme eliminates the large nonlinear current generated by the field-induced circular photogalvanic effect, allowing exclusive observation of a long-lived anomalous Hall conductivity of photocarriers that depends on the helicity of NIR light. The magnitude of this conductivity is comparable to that of GaAs despite silicon's much weaker spin-orbit coupling, and its robustness against NIR photon energy rules out a spin-polarization-based origin, which occurs only in the vicinity of the bandgap. These results suggest the emergence of the inverse orbital Hall effect, paving the way for silicon-based orbitronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_19065 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Signature of inverse orbital Hall effect in silicon studied using time-resolved terahertz polarimetry Shirai, Ami Mi Aikyo, Kota Murotani, Yuta Fujimoto, Tomohiro Kim, Changsu Akiyama, Hidefumi Miwa, Shinji Yoshinobu, Jun Matsunaga, Ryusuke Mesoscale and Nanoscale Physics Other Condensed Matter We investigated the anomalous Hall conductivity induced in silicon by circularly polarized light at room temperature using near-infrared (NIR) pump-terahertz (THz) probe spectroscopy. The time-resolved detection scheme eliminates the large nonlinear current generated by the field-induced circular photogalvanic effect, allowing exclusive observation of a long-lived anomalous Hall conductivity of photocarriers that depends on the helicity of NIR light. The magnitude of this conductivity is comparable to that of GaAs despite silicon's much weaker spin-orbit coupling, and its robustness against NIR photon energy rules out a spin-polarization-based origin, which occurs only in the vicinity of the bandgap. These results suggest the emergence of the inverse orbital Hall effect, paving the way for silicon-based orbitronics. |
| title | Signature of inverse orbital Hall effect in silicon studied using time-resolved terahertz polarimetry |
| topic | Mesoscale and Nanoscale Physics Other Condensed Matter |
| url | https://arxiv.org/abs/2512.19065 |