Brittle-to-ductile transition and strain relaxation in Si$_{1-x}$Ge$_x$ linearly graded buffers
Fuente:
arXiv
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2025
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866912782161543168 |
|---|---|
| author | Civiero, Riccardo Campagna, Elena Oliveira, Afonso Cerdeira Zoellner, Marvin Hartwig Impelluso, Davide Chrastina, Daniel Capellini, Giovanni Isella, Giovanni |
| author_facet | Civiero, Riccardo Campagna, Elena Oliveira, Afonso Cerdeira Zoellner, Marvin Hartwig Impelluso, Davide Chrastina, Daniel Capellini, Giovanni Isella, Giovanni |
| contents | The strain-relaxation mechanism of a set of Si$_{0.6}$Ge$_{0.4}$ linearly graded buffers (LGBs), grown following different temperature profiles, has been investigated by means of defect-etching and variable-temperature high-resolution X-ray diffraction (VT-HRXRD). Defect-etching experiments demonstrate that a sharp increase of threading dislocation density (TDD) from $3 \times 10^{5}$\,cm$^{-2}$ to $1.2 \times 10^{6}$\,cm$^{-2}$ takes place when the final growth temperature exceeds a critical value T$_c\approx 530^\circ$C. VT-HRXRD measurements show that in low TDD samples extra relaxation takes place for annealing temperatures larger than T$_c$, thanks to the nucleation of new dislocations. These results indicate that, below T$_c$, strain relaxation is driven by the gliding of existing dislocations while above T$_c$ new dislocations are nucleated, suggesting a link with our results and the brittle-to-ductile transition in Si$_{1-x}$Ge$_x$ alloys. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_19121 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Brittle-to-ductile transition and strain relaxation in Si$_{1-x}$Ge$_x$ linearly graded buffers Civiero, Riccardo Campagna, Elena Oliveira, Afonso Cerdeira Zoellner, Marvin Hartwig Impelluso, Davide Chrastina, Daniel Capellini, Giovanni Isella, Giovanni Materials Science The strain-relaxation mechanism of a set of Si$_{0.6}$Ge$_{0.4}$ linearly graded buffers (LGBs), grown following different temperature profiles, has been investigated by means of defect-etching and variable-temperature high-resolution X-ray diffraction (VT-HRXRD). Defect-etching experiments demonstrate that a sharp increase of threading dislocation density (TDD) from $3 \times 10^{5}$\,cm$^{-2}$ to $1.2 \times 10^{6}$\,cm$^{-2}$ takes place when the final growth temperature exceeds a critical value T$_c\approx 530^\circ$C. VT-HRXRD measurements show that in low TDD samples extra relaxation takes place for annealing temperatures larger than T$_c$, thanks to the nucleation of new dislocations. These results indicate that, below T$_c$, strain relaxation is driven by the gliding of existing dislocations while above T$_c$ new dislocations are nucleated, suggesting a link with our results and the brittle-to-ductile transition in Si$_{1-x}$Ge$_x$ alloys. |
| title | Brittle-to-ductile transition and strain relaxation in Si$_{1-x}$Ge$_x$ linearly graded buffers |
| topic | Materials Science |
| url | https://arxiv.org/abs/2512.19121 |