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| Autores principales: | , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| Materias: | |
| Acceso en línea: | https://arxiv.org/abs/2512.20072 |
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| _version_ | 1866917165769162752 |
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| author | Zhang, Qing Wang, Siyun Dong, Jianting Zhang, Jia |
| author_facet | Zhang, Qing Wang, Siyun Dong, Jianting Zhang, Jia |
| contents | The emergence of altermagnets has driven groundbreaking advances in spintronics. Notably, d-wave altermagnets support non-relativistic spin transport, efficient charge-to-spin conversion, and T-odd spin currents. In addition, their integration as electrodes in antiferromagnetic tunnel junctions (AFMTJs) enables a tunneling magnetoresistance (TMR) effect, allowing electrical detection of Néel vectors for next-generation memory devices. In this work, we investigate the non-relativistic spin transport properties of the quasi-two-dimensional (quasi-2D) d-wave altermagnet KV\textsubscript{2}Se\textsubscript{2}O and the TMR effect in KV\textsubscript{2}Se\textsubscript{2}O-based AFMTJs via first-principles calculations. Our results reveal that KV\textsubscript{2}Se\textsubscript{2}O exhibits a non-relativistic longitudinal spin polarization and a spin Hall angle both exceeding 60\% at room temperature, while KV\textsubscript{2}Se\textsubscript{2}O-based AFMTJs achieve a giant TMR reaching approximately $10^{12}$\%, which remains robust against Fermi level shifts. These findings highlight the anisotropic spin polarization inherent to d-wave staggered magnetism and underscore the critical role of Fermi surface topology in enhancing T-odd spin transport and the TMR effect in AFMTJs. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_20072 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Ultrahigh Charge-to-Spin Conversion and Tunneling Magnetoresistance in Quasi-Two-Dimensional d-wave Altermagnet Zhang, Qing Wang, Siyun Dong, Jianting Zhang, Jia Materials Science Strongly Correlated Electrons The emergence of altermagnets has driven groundbreaking advances in spintronics. Notably, d-wave altermagnets support non-relativistic spin transport, efficient charge-to-spin conversion, and T-odd spin currents. In addition, their integration as electrodes in antiferromagnetic tunnel junctions (AFMTJs) enables a tunneling magnetoresistance (TMR) effect, allowing electrical detection of Néel vectors for next-generation memory devices. In this work, we investigate the non-relativistic spin transport properties of the quasi-two-dimensional (quasi-2D) d-wave altermagnet KV\textsubscript{2}Se\textsubscript{2}O and the TMR effect in KV\textsubscript{2}Se\textsubscript{2}O-based AFMTJs via first-principles calculations. Our results reveal that KV\textsubscript{2}Se\textsubscript{2}O exhibits a non-relativistic longitudinal spin polarization and a spin Hall angle both exceeding 60\% at room temperature, while KV\textsubscript{2}Se\textsubscript{2}O-based AFMTJs achieve a giant TMR reaching approximately $10^{12}$\%, which remains robust against Fermi level shifts. These findings highlight the anisotropic spin polarization inherent to d-wave staggered magnetism and underscore the critical role of Fermi surface topology in enhancing T-odd spin transport and the TMR effect in AFMTJs. |
| title | Ultrahigh Charge-to-Spin Conversion and Tunneling Magnetoresistance in Quasi-Two-Dimensional d-wave Altermagnet |
| topic | Materials Science Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2512.20072 |