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Hauptverfasser: Itzhak, Raziel, Hayat, Alex, Goykhman, Ilya
Format: Preprint
Veröffentlicht: 2025
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Online-Zugang:https://arxiv.org/abs/2512.20208
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author Itzhak, Raziel
Hayat, Alex
Goykhman, Ilya
author_facet Itzhak, Raziel
Hayat, Alex
Goykhman, Ilya
contents Single-photon emitters are essential building blocks for quantum communication and photonic quantum technologies. However, realizing scalable, on-chip SPEs on a CMOS-compatible platform remains a significant challenge. Here, we propose and theoretically demonstrate a scalable approach to exciton confinement in two-dimensional semiconductors via local dielectric engineering. By introducing a high-dielectric-constant nanopillar above or beneath the 2D material, we create a spatially varying dielectric environment that can support localized exciton states, enabling deterministic, lithography-compatible single-photon emission without relying on strain, defects, or etching of the 2D layer. Using numerical solutions to the 2D excitonic Schrodinger equation, we quantify the resulting confinement through binding energies, wavefunction profiles, and a spatial confinement parameter. These results offer a practical and scalable route for integrating 2D-based quantum emitters into photonic platforms, paving the way for next-generation quantum optoelectronic devices.
format Preprint
id arxiv_https___arxiv_org_abs_2512_20208
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Deterministic exciton confinement in 2D semiconductors via local dielectric engineering for scalable quantum light sources
Itzhak, Raziel
Hayat, Alex
Goykhman, Ilya
Optics
Mesoscale and Nanoscale Physics
Single-photon emitters are essential building blocks for quantum communication and photonic quantum technologies. However, realizing scalable, on-chip SPEs on a CMOS-compatible platform remains a significant challenge. Here, we propose and theoretically demonstrate a scalable approach to exciton confinement in two-dimensional semiconductors via local dielectric engineering. By introducing a high-dielectric-constant nanopillar above or beneath the 2D material, we create a spatially varying dielectric environment that can support localized exciton states, enabling deterministic, lithography-compatible single-photon emission without relying on strain, defects, or etching of the 2D layer. Using numerical solutions to the 2D excitonic Schrodinger equation, we quantify the resulting confinement through binding energies, wavefunction profiles, and a spatial confinement parameter. These results offer a practical and scalable route for integrating 2D-based quantum emitters into photonic platforms, paving the way for next-generation quantum optoelectronic devices.
title Deterministic exciton confinement in 2D semiconductors via local dielectric engineering for scalable quantum light sources
topic Optics
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2512.20208