Effect of Underlayer Induced Charge Carrier Substitution on the Superconductivity of Ti40V60 Alloy Thin Films
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arXiv
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| Format: | Preprint |
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2025
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| author | Pandey, Shekhar Chandra Sharma, Shilpam Gupta, Pooja Chandra, L. S. Sharath Chattopadhyay, M. K. |
| author_facet | Pandey, Shekhar Chandra Sharma, Shilpam Gupta, Pooja Chandra, L. S. Sharath Chattopadhyay, M. K. |
| contents | The influence of metallic and semiconducting (V, Al, and Si) under-layer induced charge carrier substitution on the superconducting properties of the Ti40V60 alloy thin films are studied and also compared with a pristine reference film without any under-layer. All the films exhibit metallic behavior in the normal state and a superconducting transition at low temperatures, where the superconducting transition temperature is tunable between 4.77 K and 5.73 K. Hall measurements on the films reveal that the under-layer strongly affects the charge carrier type and density, leading to a correlation between increasing carrier concentration and decreasing TC. The Si under-layer introduces the highest disorder, yet yields the highest TC. This indicates that in the Ti40V60 alloys, a moderate amount of disorder suppresses the spin-fluctuations (inherent to the alloy system) induced pair breaking, thereby enhancing the superconductivity. The comparable TC of the film with V under-layer and the film without under-layer, and the much smaller coherence length (~6.2 nm) as compared to the film thickness (25 nm), confirm the absence of any significant proximity effects. These findings demonstrate that under-layer engineering provides an effective route to tune the superconducting properties of Ti-V alloy thin films. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2512_20242 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Effect of Underlayer Induced Charge Carrier Substitution on the Superconductivity of Ti40V60 Alloy Thin Films Pandey, Shekhar Chandra Sharma, Shilpam Gupta, Pooja Chandra, L. S. Sharath Chattopadhyay, M. K. Superconductivity The influence of metallic and semiconducting (V, Al, and Si) under-layer induced charge carrier substitution on the superconducting properties of the Ti40V60 alloy thin films are studied and also compared with a pristine reference film without any under-layer. All the films exhibit metallic behavior in the normal state and a superconducting transition at low temperatures, where the superconducting transition temperature is tunable between 4.77 K and 5.73 K. Hall measurements on the films reveal that the under-layer strongly affects the charge carrier type and density, leading to a correlation between increasing carrier concentration and decreasing TC. The Si under-layer introduces the highest disorder, yet yields the highest TC. This indicates that in the Ti40V60 alloys, a moderate amount of disorder suppresses the spin-fluctuations (inherent to the alloy system) induced pair breaking, thereby enhancing the superconductivity. The comparable TC of the film with V under-layer and the film without under-layer, and the much smaller coherence length (~6.2 nm) as compared to the film thickness (25 nm), confirm the absence of any significant proximity effects. These findings demonstrate that under-layer engineering provides an effective route to tune the superconducting properties of Ti-V alloy thin films. |
| title | Effect of Underlayer Induced Charge Carrier Substitution on the Superconductivity of Ti40V60 Alloy Thin Films |
| topic | Superconductivity |
| url | https://arxiv.org/abs/2512.20242 |