Reductive Contact and Dipolar Interface Engineering Enable Stable Flexible CsSnI3 Nanowire Photodetectors

Fuente: arXiv
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Main Authors: Dai, Letian, Chen, Wanru, Geng, Quanming, Xu, Ying, Zhou, Guowu, Chen, Nuo, Li, Xiongjie
Format: Preprint
Published: 2025
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author Dai, Letian
Chen, Wanru
Geng, Quanming
Xu, Ying
Zhou, Guowu
Chen, Nuo
Li, Xiongjie
author_facet Dai, Letian
Chen, Wanru
Geng, Quanming
Xu, Ying
Zhou, Guowu
Chen, Nuo
Li, Xiongjie
contents Lead-free tin-based halide perovskites are attractive for flexible and environmentally benign optoelectronics, but their application is limited by the rapid oxidation of Sn2+ to Sn4+ and poor operational stability. Here, we report a flexible CsSnI3 nanowire photodetector that achieves both high near-infrared photoresponse and long-term stability through synergistic aluminium-substrate contact engineering and dipolar interface modification. A 0.2 mm anodized aluminium foil serves as the flexible substrate, where localized laser ablation exposes metallic aluminium regions that act as reductive sites, effectively suppressing Sn2+ oxidation during nanowire growth. Simultaneously, a polar interlayer of 3-fluoro-2-nitroanisole is introduced to improve energy-level alignment, suppress interfacial deprotonation, and enhance charge extraction. The resulting device exhibits a responsivity of 0.39 A W-1, a specific detectivity of 1.38 * 10^13 Jones, and a wide linear dynamic range of 156 dB under 850 nm illumination. Moreover, the device retains over 85% of its initial photocurrent after 60 days in ambient air and maintains 94% of its initial photocurrent after 1000 bending cycles. This work establishes an effective strategy for stabilizing Sn-based perovskites toward high-performance flexible optoelectronic devices.
format Preprint
id arxiv_https___arxiv_org_abs_2512_20267
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Reductive Contact and Dipolar Interface Engineering Enable Stable Flexible CsSnI3 Nanowire Photodetectors
Dai, Letian
Chen, Wanru
Geng, Quanming
Xu, Ying
Zhou, Guowu
Chen, Nuo
Li, Xiongjie
Materials Science
Applied Physics
Lead-free tin-based halide perovskites are attractive for flexible and environmentally benign optoelectronics, but their application is limited by the rapid oxidation of Sn2+ to Sn4+ and poor operational stability. Here, we report a flexible CsSnI3 nanowire photodetector that achieves both high near-infrared photoresponse and long-term stability through synergistic aluminium-substrate contact engineering and dipolar interface modification. A 0.2 mm anodized aluminium foil serves as the flexible substrate, where localized laser ablation exposes metallic aluminium regions that act as reductive sites, effectively suppressing Sn2+ oxidation during nanowire growth. Simultaneously, a polar interlayer of 3-fluoro-2-nitroanisole is introduced to improve energy-level alignment, suppress interfacial deprotonation, and enhance charge extraction. The resulting device exhibits a responsivity of 0.39 A W-1, a specific detectivity of 1.38 * 10^13 Jones, and a wide linear dynamic range of 156 dB under 850 nm illumination. Moreover, the device retains over 85% of its initial photocurrent after 60 days in ambient air and maintains 94% of its initial photocurrent after 1000 bending cycles. This work establishes an effective strategy for stabilizing Sn-based perovskites toward high-performance flexible optoelectronic devices.
title Reductive Contact and Dipolar Interface Engineering Enable Stable Flexible CsSnI3 Nanowire Photodetectors
topic Materials Science
Applied Physics
url https://arxiv.org/abs/2512.20267