Reductive Contact and Dipolar Interface Engineering Enable Stable Flexible CsSnI3 Nanowire Photodetectors
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| Format: | Preprint |
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2025
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| _version_ | 1866909974631809024 |
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| author | Dai, Letian Chen, Wanru Geng, Quanming Xu, Ying Zhou, Guowu Chen, Nuo Li, Xiongjie |
| author_facet | Dai, Letian Chen, Wanru Geng, Quanming Xu, Ying Zhou, Guowu Chen, Nuo Li, Xiongjie |
| contents | Lead-free tin-based halide perovskites are attractive for flexible and environmentally benign optoelectronics, but their application is limited by the rapid oxidation of Sn2+ to Sn4+ and poor operational stability. Here, we report a flexible CsSnI3 nanowire photodetector that achieves both high near-infrared photoresponse and long-term stability through synergistic aluminium-substrate contact engineering and dipolar interface modification. A 0.2 mm anodized aluminium foil serves as the flexible substrate, where localized laser ablation exposes metallic aluminium regions that act as reductive sites, effectively suppressing Sn2+ oxidation during nanowire growth. Simultaneously, a polar interlayer of 3-fluoro-2-nitroanisole is introduced to improve energy-level alignment, suppress interfacial deprotonation, and enhance charge extraction. The resulting device exhibits a responsivity of 0.39 A W-1, a specific detectivity of 1.38 * 10^13 Jones, and a wide linear dynamic range of 156 dB under 850 nm illumination. Moreover, the device retains over 85% of its initial photocurrent after 60 days in ambient air and maintains 94% of its initial photocurrent after 1000 bending cycles. This work establishes an effective strategy for stabilizing Sn-based perovskites toward high-performance flexible optoelectronic devices. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2512_20267 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Reductive Contact and Dipolar Interface Engineering Enable Stable Flexible CsSnI3 Nanowire Photodetectors Dai, Letian Chen, Wanru Geng, Quanming Xu, Ying Zhou, Guowu Chen, Nuo Li, Xiongjie Materials Science Applied Physics Lead-free tin-based halide perovskites are attractive for flexible and environmentally benign optoelectronics, but their application is limited by the rapid oxidation of Sn2+ to Sn4+ and poor operational stability. Here, we report a flexible CsSnI3 nanowire photodetector that achieves both high near-infrared photoresponse and long-term stability through synergistic aluminium-substrate contact engineering and dipolar interface modification. A 0.2 mm anodized aluminium foil serves as the flexible substrate, where localized laser ablation exposes metallic aluminium regions that act as reductive sites, effectively suppressing Sn2+ oxidation during nanowire growth. Simultaneously, a polar interlayer of 3-fluoro-2-nitroanisole is introduced to improve energy-level alignment, suppress interfacial deprotonation, and enhance charge extraction. The resulting device exhibits a responsivity of 0.39 A W-1, a specific detectivity of 1.38 * 10^13 Jones, and a wide linear dynamic range of 156 dB under 850 nm illumination. Moreover, the device retains over 85% of its initial photocurrent after 60 days in ambient air and maintains 94% of its initial photocurrent after 1000 bending cycles. This work establishes an effective strategy for stabilizing Sn-based perovskites toward high-performance flexible optoelectronic devices. |
| title | Reductive Contact and Dipolar Interface Engineering Enable Stable Flexible CsSnI3 Nanowire Photodetectors |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2512.20267 |