Ferromagnetic interface engineering of spin-charge conversion in RuO$_2$
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| Main Authors: | , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866911469266796544 |
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| author | Yang, Dongchao Li, Zhaoqing Dai, Yu Lang, Lili Shi, Zhong Yuan, Zhe Zhou, Shi-Ming |
| author_facet | Yang, Dongchao Li, Zhaoqing Dai, Yu Lang, Lili Shi, Zhong Yuan, Zhe Zhou, Shi-Ming |
| contents | Spin-orbit torque efficiency is conventionally fixed by bulk materials. $D$-wave altermagnets introduce an additional nonrelativistic spin-charge conversion channel beyond inverse spin-Hall effect. Using prototypical candidate RuO$_2$ as an example, we show that the adjacent ferromagnet alone can dictate both the magnitude and sign of spin-charge conversion. Spin-pumping measurements on RuO$_2$/Y$_3$Fe$_5$O$_{12}$ (YIG) and RuO$_2$/Ni$_{80}$Fe$_{20}$ (Py) bilayers yield opposite effective spin-Hall angles that persist across crystalline and polycrystalline RuO$_2$. Inserting an ultrathin Au spacer at the RuO$_2$/YIG interface reverses the signal, envidencing a dominant interfacial inverse Rashba-Edelstein effect, whereas RuO$_2$/Py is governed by bulk inverse spin-Hall effect. First-principles calculations trace this dichotomy to interface-selective band hybridization: Rashba surface states survive at the insulating YIG contact yet are quenched by metallic Py. Our findings establish ferromagnetic interfacing as a deterministic knob for tailoring spin-charge conversion in altermagnetic oxides, paving the way to field-free, low-dissipation spintronic memory devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_21100 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Ferromagnetic interface engineering of spin-charge conversion in RuO$_2$ Yang, Dongchao Li, Zhaoqing Dai, Yu Lang, Lili Shi, Zhong Yuan, Zhe Zhou, Shi-Ming Materials Science Spin-orbit torque efficiency is conventionally fixed by bulk materials. $D$-wave altermagnets introduce an additional nonrelativistic spin-charge conversion channel beyond inverse spin-Hall effect. Using prototypical candidate RuO$_2$ as an example, we show that the adjacent ferromagnet alone can dictate both the magnitude and sign of spin-charge conversion. Spin-pumping measurements on RuO$_2$/Y$_3$Fe$_5$O$_{12}$ (YIG) and RuO$_2$/Ni$_{80}$Fe$_{20}$ (Py) bilayers yield opposite effective spin-Hall angles that persist across crystalline and polycrystalline RuO$_2$. Inserting an ultrathin Au spacer at the RuO$_2$/YIG interface reverses the signal, envidencing a dominant interfacial inverse Rashba-Edelstein effect, whereas RuO$_2$/Py is governed by bulk inverse spin-Hall effect. First-principles calculations trace this dichotomy to interface-selective band hybridization: Rashba surface states survive at the insulating YIG contact yet are quenched by metallic Py. Our findings establish ferromagnetic interfacing as a deterministic knob for tailoring spin-charge conversion in altermagnetic oxides, paving the way to field-free, low-dissipation spintronic memory devices. |
| title | Ferromagnetic interface engineering of spin-charge conversion in RuO$_2$ |
| topic | Materials Science |
| url | https://arxiv.org/abs/2512.21100 |