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| Hauptverfasser: | , , , , , , , , , |
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| Format: | Preprint |
| Veröffentlicht: |
2025
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| Online-Zugang: | https://arxiv.org/abs/2512.21125 |
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| _version_ | 1866909975406706688 |
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| author | Borel, A. Ivanova, T. V. Cervantes-Villanueva, J. Thor, P. Baek, H. Taniguchi, T. Watanabe, K. Molina-Sanchez, A. Gerardot, B. D. Brotons-Gisbert, M. |
| author_facet | Borel, A. Ivanova, T. V. Cervantes-Villanueva, J. Thor, P. Baek, H. Taniguchi, T. Watanabe, K. Molina-Sanchez, A. Gerardot, B. D. Brotons-Gisbert, M. |
| contents | Moiré superlattices in transition-metal dichalcogenide semiconductor heterobilayers enable the quantum confinement of interlayer excitons with large out-of-plane permanent electric dipoles and spin-valley control. Here, we report a novel phonon-assisted excitation mechanism of individual moiré-trapped interlayer excitons in 2H-stacked MoSe$_2$/WSe$_2$ heterobilayers via chiral $E^{\prime\prime}$ in-plane optical phonons at the Γ-point. This excitation pathway preserves valley-selective optical selection rules and enables deterministic generation of individual interlayer excitons with defined helicity, emitting within a spectrally narrow energy spread. Through photoluminescence excitation spectroscopy in both the ensemble and quantum emitter regimes, we identify a fixed phonon energy of $\sim$23 meV mediating the process. First-principles calculations corroborate the symmetry and energy of the relevant phonon mode and its coupling to interlayer excitons, providing microscopic support for the observed valley-selective phonon-assisted excitation mechanism. Our results highlight the utility of chiral phonons as a tool for controlled excitation of quantum emitters in TMD moiré systems, opening new opportunities for valleytronic and quantum photonic applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_21125 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Photoexcitation of moiré-trapped interlayer excitons via chiral phonons Borel, A. Ivanova, T. V. Cervantes-Villanueva, J. Thor, P. Baek, H. Taniguchi, T. Watanabe, K. Molina-Sanchez, A. Gerardot, B. D. Brotons-Gisbert, M. Quantum Physics Materials Science Moiré superlattices in transition-metal dichalcogenide semiconductor heterobilayers enable the quantum confinement of interlayer excitons with large out-of-plane permanent electric dipoles and spin-valley control. Here, we report a novel phonon-assisted excitation mechanism of individual moiré-trapped interlayer excitons in 2H-stacked MoSe$_2$/WSe$_2$ heterobilayers via chiral $E^{\prime\prime}$ in-plane optical phonons at the Γ-point. This excitation pathway preserves valley-selective optical selection rules and enables deterministic generation of individual interlayer excitons with defined helicity, emitting within a spectrally narrow energy spread. Through photoluminescence excitation spectroscopy in both the ensemble and quantum emitter regimes, we identify a fixed phonon energy of $\sim$23 meV mediating the process. First-principles calculations corroborate the symmetry and energy of the relevant phonon mode and its coupling to interlayer excitons, providing microscopic support for the observed valley-selective phonon-assisted excitation mechanism. Our results highlight the utility of chiral phonons as a tool for controlled excitation of quantum emitters in TMD moiré systems, opening new opportunities for valleytronic and quantum photonic applications. |
| title | Photoexcitation of moiré-trapped interlayer excitons via chiral phonons |
| topic | Quantum Physics Materials Science |
| url | https://arxiv.org/abs/2512.21125 |