Channel-last gate-all-around nanosheet oxide semiconductor transistors

Fuente: arXiv

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Bibliographic Details
Main Authors:	Athena, Fabia F., Wu, Xiangjin, Safron, Nathaniel S., McKeown-Green, Amy Siobhan, Dossena, Mauro, Evans, Jack C., Hartanto, Jonathan, Cho, Yukio, Zhong, Donglai, Peña, Tara, Czaja, Paweł, Moradifar, Parivash, McIntyre, Paul C., Luisier, Mathieu, Cui, Yi, Dionne, Jennifer A., Pitner, Greg, Radu, Iuliana P., Pop, Eric, Salleo, Alberto, Wong, H. -S. Philip
Format:	Preprint
Published:	2025
Subjects:	Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2512.21330