Entangled Moire Chern Insulator in Rhombohedral Graphene
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arXiv
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| Format: | Preprint |
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2025
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| _version_ | 1866915694129446912 |
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| author | Zhang, Zaizhe Chen, Xi Watanabe, Kenji Taniguchi, Takashi Song, Zhida Lu, Xiaobo |
| author_facet | Zhang, Zaizhe Chen, Xi Watanabe, Kenji Taniguchi, Takashi Song, Zhida Lu, Xiaobo |
| contents | Graphene-based moire superlattices exhibit novel quantum phenomena driven by pronounced interactions, leading to topological corrected states like orbital Chern insulators exhibiting quantum anomalous Hall effect (QAHE). Typically, intrinsic Chern insulators are stabilized at odd moiré fillings, as even fillings often result in valley-balanced, topologically trivial states at zero magnetic field. In our work, we report the observation of an intrinsic Chern insulator with C = 1 state at moire filling v = 2 in rhombohedral octalayer graphene (R8G)/hBN moire superlattice. Observing such Chern insulators in particular with C = 1 at v = 2 is intriguing, as each moiré band carries Chern number C = 1 or -1. We further demonstrate such a state can originate from the entanglement between the low-energy moire flat bands and high-energy remote bands according to the Hartree-Fock calculation. Our findings extend the known topological phase diagram of rhombohedral multilayer graphene (RMG) moire systems and establish this platform as highly promising for investigating strong electron correlations and multiband hybridized transport. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_21609 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Entangled Moire Chern Insulator in Rhombohedral Graphene Zhang, Zaizhe Chen, Xi Watanabe, Kenji Taniguchi, Takashi Song, Zhida Lu, Xiaobo Mesoscale and Nanoscale Physics Strongly Correlated Electrons Graphene-based moire superlattices exhibit novel quantum phenomena driven by pronounced interactions, leading to topological corrected states like orbital Chern insulators exhibiting quantum anomalous Hall effect (QAHE). Typically, intrinsic Chern insulators are stabilized at odd moiré fillings, as even fillings often result in valley-balanced, topologically trivial states at zero magnetic field. In our work, we report the observation of an intrinsic Chern insulator with C = 1 state at moire filling v = 2 in rhombohedral octalayer graphene (R8G)/hBN moire superlattice. Observing such Chern insulators in particular with C = 1 at v = 2 is intriguing, as each moiré band carries Chern number C = 1 or -1. We further demonstrate such a state can originate from the entanglement between the low-energy moire flat bands and high-energy remote bands according to the Hartree-Fock calculation. Our findings extend the known topological phase diagram of rhombohedral multilayer graphene (RMG) moire systems and establish this platform as highly promising for investigating strong electron correlations and multiband hybridized transport. |
| title | Entangled Moire Chern Insulator in Rhombohedral Graphene |
| topic | Mesoscale and Nanoscale Physics Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2512.21609 |