Defect Engineering for Stabilizing Magnetic and Topological Properties in Mn(Bi1-xSbx)2Te4

Fuente: arXiv
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Autori principali: Chen, Haonan, Wang, Jiayu, Li, Huayao, Duan, Xunkai, Wang, Yuxiang, Xu, Zixuan, Xia, Yingchao, He, Wenhao, Jia, Zehao, Cao, Xiangyu, Mou, Yicheng, Jiang, Xiangyu, Gu, Jiaming, Leng, Pengliang, Zhu, Fengfeng, Zheng, Changlin, Yuan, Xiang, Xiu, Faxian, Zhou, Tong, Miao, Lin, Zhang, Cheng
Natura: Preprint
Pubblicazione: 2025
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author Chen, Haonan
Wang, Jiayu
Li, Huayao
Duan, Xunkai
Wang, Yuxiang
Xu, Zixuan
Xia, Yingchao
He, Wenhao
Jia, Zehao
Cao, Xiangyu
Mou, Yicheng
Jiang, Xiangyu
Gu, Jiaming
Leng, Pengliang
Zhu, Fengfeng
Zheng, Changlin
Yuan, Xiang
Xiu, Faxian
Zhou, Tong
Miao, Lin
Zhang, Cheng
author_facet Chen, Haonan
Wang, Jiayu
Li, Huayao
Duan, Xunkai
Wang, Yuxiang
Xu, Zixuan
Xia, Yingchao
He, Wenhao
Jia, Zehao
Cao, Xiangyu
Mou, Yicheng
Jiang, Xiangyu
Gu, Jiaming
Leng, Pengliang
Zhu, Fengfeng
Zheng, Changlin
Yuan, Xiang
Xiu, Faxian
Zhou, Tong
Miao, Lin
Zhang, Cheng
contents MnBi2Te4 is a versatile platform for exploring diverse topological quantum states, yet its potential is hampered by intrinsic antisite defects. While Sb substitution has been employed to tune the Fermi level towards the charge neutral point, it exacerbates the formation of Mn-Sb antisite defects. Here, we address this challenge by combining first-principles calculations with strategic synthesis to systematically investigate and control antisite defects in Mn(Bi1-xSbx)2Te4. Our calculations reveal that increasing antisite defect density progressively destroys the field-forced magnetic Weyl state, eventually driving the system into a trivial magnetic insulator. Motivated by these findings, we develop an optimized chemical vapor transport method, yielding high-quality Mn(Bi1-xSbx)2Te4 crystals with significantly reduced antisite defect density. The emergence of strong Shubnikov-de Haas oscillations in the forced ferromagnetic state and a pronounced anomalous Hall effect near charge neutrality, with opposite signs for n- and p-type samples, confirms the type-II Weyl semimetal nature. These findings underscore the critical role of antisite defects in determining the magnetic and topological properties of Mn(Bi1-xSbx)2Te4 and establish defect engineering via optimized synthesis as a crucial strategy for realizing its exotic magnetic topological states.
format Preprint
id arxiv_https___arxiv_org_abs_2512_21680
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Defect Engineering for Stabilizing Magnetic and Topological Properties in Mn(Bi1-xSbx)2Te4
Chen, Haonan
Wang, Jiayu
Li, Huayao
Duan, Xunkai
Wang, Yuxiang
Xu, Zixuan
Xia, Yingchao
He, Wenhao
Jia, Zehao
Cao, Xiangyu
Mou, Yicheng
Jiang, Xiangyu
Gu, Jiaming
Leng, Pengliang
Zhu, Fengfeng
Zheng, Changlin
Yuan, Xiang
Xiu, Faxian
Zhou, Tong
Miao, Lin
Zhang, Cheng
Materials Science
Mesoscale and Nanoscale Physics
MnBi2Te4 is a versatile platform for exploring diverse topological quantum states, yet its potential is hampered by intrinsic antisite defects. While Sb substitution has been employed to tune the Fermi level towards the charge neutral point, it exacerbates the formation of Mn-Sb antisite defects. Here, we address this challenge by combining first-principles calculations with strategic synthesis to systematically investigate and control antisite defects in Mn(Bi1-xSbx)2Te4. Our calculations reveal that increasing antisite defect density progressively destroys the field-forced magnetic Weyl state, eventually driving the system into a trivial magnetic insulator. Motivated by these findings, we develop an optimized chemical vapor transport method, yielding high-quality Mn(Bi1-xSbx)2Te4 crystals with significantly reduced antisite defect density. The emergence of strong Shubnikov-de Haas oscillations in the forced ferromagnetic state and a pronounced anomalous Hall effect near charge neutrality, with opposite signs for n- and p-type samples, confirms the type-II Weyl semimetal nature. These findings underscore the critical role of antisite defects in determining the magnetic and topological properties of Mn(Bi1-xSbx)2Te4 and establish defect engineering via optimized synthesis as a crucial strategy for realizing its exotic magnetic topological states.
title Defect Engineering for Stabilizing Magnetic and Topological Properties in Mn(Bi1-xSbx)2Te4
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2512.21680