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| Main Authors: | , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2512.23253 |
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| _version_ | 1866912904093106176 |
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| author | Gao, Yunfei Li, Aolin Fu, Zesen Zhang, Bei Duan, Haiming Ouyang, Fangping |
| author_facet | Gao, Yunfei Li, Aolin Fu, Zesen Zhang, Bei Duan, Haiming Ouyang, Fangping |
| contents | Altermagnets demonstrate significant potential in spintronics due to their unique non-relativistic spin-splitting properties, yet altermagnetic devices still face challenges in efficiently switching logic states. Here, we report electrostatically controllable spin-momentum locking in bilayer Cr$_{2}$SeO and design a dual-gate altermagnetic tunnel junction (AMTJ), which can switch between high and low resistance states without switching the Néel vector. First-principles calculations demonstrate that vertical electric field can induce significant spin splitting in bilayer Cr$_{2}$SeO. Reversing the electric field direction can alter the spin-momentum locking in bilayer Cr$_{2}$SeO. Leveraging this electric-field-tunable spin splitting, the dual-gate AMTJ exhibits an ultrahigh tunneling magnetoresistance (TMR) ratio of $10^{7}$. This work provides theoretical support for the design of fully electrically controlled AMTJs and demonstrates their great potential for applications in spintronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_23253 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | A Dual-Gate Altermagnetic Tunnel Junction Based on Bilayer Cr$_{2}$SeO Gao, Yunfei Li, Aolin Fu, Zesen Zhang, Bei Duan, Haiming Ouyang, Fangping Materials Science Altermagnets demonstrate significant potential in spintronics due to their unique non-relativistic spin-splitting properties, yet altermagnetic devices still face challenges in efficiently switching logic states. Here, we report electrostatically controllable spin-momentum locking in bilayer Cr$_{2}$SeO and design a dual-gate altermagnetic tunnel junction (AMTJ), which can switch between high and low resistance states without switching the Néel vector. First-principles calculations demonstrate that vertical electric field can induce significant spin splitting in bilayer Cr$_{2}$SeO. Reversing the electric field direction can alter the spin-momentum locking in bilayer Cr$_{2}$SeO. Leveraging this electric-field-tunable spin splitting, the dual-gate AMTJ exhibits an ultrahigh tunneling magnetoresistance (TMR) ratio of $10^{7}$. This work provides theoretical support for the design of fully electrically controlled AMTJs and demonstrates their great potential for applications in spintronic devices. |
| title | A Dual-Gate Altermagnetic Tunnel Junction Based on Bilayer Cr$_{2}$SeO |
| topic | Materials Science |
| url | https://arxiv.org/abs/2512.23253 |