Edge emission from 265~nm UV-C LEDs grown by MBE on bulk AlN
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arXiv
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866917175226269696 |
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| author | Agrawal, Shivali Huang, Hsin-Wei S. Bhattacharya, Debaditya Ramesh, Madhav Szkudlarek, Krzesimir Turski, Henryk Protasenko, Vladimir Xing, Huili Grace Jena, Debdeep |
| author_facet | Agrawal, Shivali Huang, Hsin-Wei S. Bhattacharya, Debaditya Ramesh, Madhav Szkudlarek, Krzesimir Turski, Henryk Protasenko, Vladimir Xing, Huili Grace Jena, Debdeep |
| contents | UV-C LEDs pseudomorphically grown by MBE on bulk AlN substrates emitting at 265 nm are demonstrated. High current density up to 800 A/cm$^2$, 5 orders of on/off ratio, and low differential on-resistance of 2.6 m$Ω\cdot$cm$^2$ at the highest current density is achieved. The LED heterostructure has a high refractive index waveguide core surrounded by n- and p-cladding layers similar to a laser diode designed for mode confinement at 270 nm to facilitate edge emission and collection of photons. Edge-emitting devices are made by cleaving the fabricated LEDs along the $m$-plane of the wurtzite crystal. Electrical injection results in emission of high energy 4.7 eV photons that are collected from the cleaved edge of the LEDs corresponding to the optical bandgap of the AlGaN active region. The contribution of power dissipation across the n- and p-regions of the diode is discussed. The n-contact resistance to n-AlGaN is identified as the largest contributor to the series resistance of the LED in the present generation of devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_23896 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Edge emission from 265~nm UV-C LEDs grown by MBE on bulk AlN Agrawal, Shivali Huang, Hsin-Wei S. Bhattacharya, Debaditya Ramesh, Madhav Szkudlarek, Krzesimir Turski, Henryk Protasenko, Vladimir Xing, Huili Grace Jena, Debdeep Optics UV-C LEDs pseudomorphically grown by MBE on bulk AlN substrates emitting at 265 nm are demonstrated. High current density up to 800 A/cm$^2$, 5 orders of on/off ratio, and low differential on-resistance of 2.6 m$Ω\cdot$cm$^2$ at the highest current density is achieved. The LED heterostructure has a high refractive index waveguide core surrounded by n- and p-cladding layers similar to a laser diode designed for mode confinement at 270 nm to facilitate edge emission and collection of photons. Edge-emitting devices are made by cleaving the fabricated LEDs along the $m$-plane of the wurtzite crystal. Electrical injection results in emission of high energy 4.7 eV photons that are collected from the cleaved edge of the LEDs corresponding to the optical bandgap of the AlGaN active region. The contribution of power dissipation across the n- and p-regions of the diode is discussed. The n-contact resistance to n-AlGaN is identified as the largest contributor to the series resistance of the LED in the present generation of devices. |
| title | Edge emission from 265~nm UV-C LEDs grown by MBE on bulk AlN |
| topic | Optics |
| url | https://arxiv.org/abs/2512.23896 |