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| Main Authors: | , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2512.24229 |
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| _version_ | 1866908749418987520 |
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| author | Yang, Yang Rao, Shaofeng Hou, Yuxuan Liu, Jiabo Hu, Deng Guo, Yufei Zhao, Jianzhou Ren, Hechen Wang, Zhiwei Yang, Fan |
| author_facet | Yang, Yang Rao, Shaofeng Hou, Yuxuan Liu, Jiabo Hu, Deng Guo, Yufei Zhao, Jianzhou Ren, Hechen Wang, Zhiwei Yang, Fan |
| contents | Kagome metals AV$_3$Sb$_5$ (A = K, Rb, Cs) have recently emerged as a promising platform for exploring correlated and topological quantum states, yet their potential for optoelectronic applications remains largely unexplored. Here, we report high-performance photodetectors based on van der Waals KV$_3$Sb$_5$/WSe$_2$ heterojunctions. A high-quality Schottky interface readily forms between KV$_3$Sb$_5$ and WSe$_2$, enabling efficient separation and transport of photoinduced carriers. Under 520 nm illumination, the device achieves an open-circuit voltage up to 0.6 V, a responsivity of 809 mA/W, and a fast response time of 18.3 us. This work demonstrates the promising optoelectronic applications of Kagome metals and highlights the potential of KV$_3$Sb$_5$-based van der Waals heterostructures for high-performance photodetection. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_24229 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | High-Performance KV$_3$Sb$_5$/WSe$_2$ van der Waals Photodetectors Yang, Yang Rao, Shaofeng Hou, Yuxuan Liu, Jiabo Hu, Deng Guo, Yufei Zhao, Jianzhou Ren, Hechen Wang, Zhiwei Yang, Fan Materials Science Kagome metals AV$_3$Sb$_5$ (A = K, Rb, Cs) have recently emerged as a promising platform for exploring correlated and topological quantum states, yet their potential for optoelectronic applications remains largely unexplored. Here, we report high-performance photodetectors based on van der Waals KV$_3$Sb$_5$/WSe$_2$ heterojunctions. A high-quality Schottky interface readily forms between KV$_3$Sb$_5$ and WSe$_2$, enabling efficient separation and transport of photoinduced carriers. Under 520 nm illumination, the device achieves an open-circuit voltage up to 0.6 V, a responsivity of 809 mA/W, and a fast response time of 18.3 us. This work demonstrates the promising optoelectronic applications of Kagome metals and highlights the potential of KV$_3$Sb$_5$-based van der Waals heterostructures for high-performance photodetection. |
| title | High-Performance KV$_3$Sb$_5$/WSe$_2$ van der Waals Photodetectors |
| topic | Materials Science |
| url | https://arxiv.org/abs/2512.24229 |