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Auteurs principaux: Chen, Li, Shi, Junlan, Zhang, Jiani, Fu, Botao
Format: Preprint
Publié: 2026
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Accès en ligne:https://arxiv.org/abs/2601.00407
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author Chen, Li
Shi, Junlan
Zhang, Jiani
Fu, Botao
author_facet Chen, Li
Shi, Junlan
Zhang, Jiani
Fu, Botao
contents Two-dimensional type-II topological semimetals (TSMs), characterized by strongly tilted Dirac cones, have attracted intense interest for their unconventional electronic properties and exotic transport behaviors. However, rational design remains challenging due to the sensitivity of band tilting to lattice geometry, atomic coordination, and symmetry constraints. Here, we present a bottom-up approach to engineer ideal type-II nodal line semimetals (NLSMs) in van der Waals bilayers via atomic intercalation. Using monolayer $h$-AlN as a prototype, we show that fluorine-intercalated bilayer AlN (F@BL-AlN) hosts a symmetry-protected type-II nodal loop precisely at the Fermi level, enabled by preserved mirror symmetry ($\mathcal{M}_z$) and tailored interlayer hybridization. First-principles calculations reveal that fluorine not only tunes interlayer coupling but also aligns the Fermi energy with the nodal line, stabilizing the type-II NLSM phase. The system exhibits tunable electronic properties under external electric and strain fields and features a van Hove singularity that induces spontaneous ferromagnetism, realizing a ferromagnetic topological semimetal state. This work provides a versatile platform for designing type-II NLSMs and offers practical guidance for their experimental realization.
format Preprint
id arxiv_https___arxiv_org_abs_2601_00407
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Engineering Ideal 2D Type-II Nodal Line Semimetals via Stacking and Intercalation of van der Waals Layers
Chen, Li
Shi, Junlan
Zhang, Jiani
Fu, Botao
Materials Science
Two-dimensional type-II topological semimetals (TSMs), characterized by strongly tilted Dirac cones, have attracted intense interest for their unconventional electronic properties and exotic transport behaviors. However, rational design remains challenging due to the sensitivity of band tilting to lattice geometry, atomic coordination, and symmetry constraints. Here, we present a bottom-up approach to engineer ideal type-II nodal line semimetals (NLSMs) in van der Waals bilayers via atomic intercalation. Using monolayer $h$-AlN as a prototype, we show that fluorine-intercalated bilayer AlN (F@BL-AlN) hosts a symmetry-protected type-II nodal loop precisely at the Fermi level, enabled by preserved mirror symmetry ($\mathcal{M}_z$) and tailored interlayer hybridization. First-principles calculations reveal that fluorine not only tunes interlayer coupling but also aligns the Fermi energy with the nodal line, stabilizing the type-II NLSM phase. The system exhibits tunable electronic properties under external electric and strain fields and features a van Hove singularity that induces spontaneous ferromagnetism, realizing a ferromagnetic topological semimetal state. This work provides a versatile platform for designing type-II NLSMs and offers practical guidance for their experimental realization.
title Engineering Ideal 2D Type-II Nodal Line Semimetals via Stacking and Intercalation of van der Waals Layers
topic Materials Science
url https://arxiv.org/abs/2601.00407