Family of High-Chern-Number Orbital Magnets in Twisted Rhombohedral Graphene
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arXiv
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| Autores principales: | , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2026
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| author | Wang, Xirui Benítez, L. Antonio Phong, Vo Tien Chu, Wai In Watanabe, Kenji Taniguchi, Takashi Lewandowski, Cyprian Jarillo-Herrero, Pablo |
| author_facet | Wang, Xirui Benítez, L. Antonio Phong, Vo Tien Chu, Wai In Watanabe, Kenji Taniguchi, Takashi Lewandowski, Cyprian Jarillo-Herrero, Pablo |
| contents | Realizing Chern insulators with Chern numbers greater than one remains a major goal in quantum materials research. Such platforms promise multichannel dissipationless chiral transport and access to correlated phases beyond the conventional C = 1 paradigm. Here, we discover a family of high-Chern-number orbital magnets in twisted monolayer-multilayer rhombohedral graphene, denoted (1+n) with n = 3, 4, and 5. Magnetotransport measurements show pronounced anomalous Hall effects at one and three electrons per moiré unit cell when they are polarized away from the moiré interface. Across the (1+n) systems, we observe a clear topological hierarchy C = n, revealed by the Středa trajectories and the quantized Hall resistance. Our experimental observations are supported by self-consistent mean-field calculations. Moreover, we realize both electrical and magnetic switching of the high-Chern-number states by flipping the valley polarization. Together, these results establish a tunable hierarchy of orbital Chern magnets in twisted rhombohedral graphene, offering systematic control of Chern number and topology through layer engineering in pristine graphene moiré systems. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2601_01087 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Family of High-Chern-Number Orbital Magnets in Twisted Rhombohedral Graphene Wang, Xirui Benítez, L. Antonio Phong, Vo Tien Chu, Wai In Watanabe, Kenji Taniguchi, Takashi Lewandowski, Cyprian Jarillo-Herrero, Pablo Mesoscale and Nanoscale Physics Materials Science Strongly Correlated Electrons Realizing Chern insulators with Chern numbers greater than one remains a major goal in quantum materials research. Such platforms promise multichannel dissipationless chiral transport and access to correlated phases beyond the conventional C = 1 paradigm. Here, we discover a family of high-Chern-number orbital magnets in twisted monolayer-multilayer rhombohedral graphene, denoted (1+n) with n = 3, 4, and 5. Magnetotransport measurements show pronounced anomalous Hall effects at one and three electrons per moiré unit cell when they are polarized away from the moiré interface. Across the (1+n) systems, we observe a clear topological hierarchy C = n, revealed by the Středa trajectories and the quantized Hall resistance. Our experimental observations are supported by self-consistent mean-field calculations. Moreover, we realize both electrical and magnetic switching of the high-Chern-number states by flipping the valley polarization. Together, these results establish a tunable hierarchy of orbital Chern magnets in twisted rhombohedral graphene, offering systematic control of Chern number and topology through layer engineering in pristine graphene moiré systems. |
| title | Family of High-Chern-Number Orbital Magnets in Twisted Rhombohedral Graphene |
| topic | Mesoscale and Nanoscale Physics Materials Science Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2601.01087 |