Salvato in:
| Autori principali: | , , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2026
|
| Soggetti: | |
| Accesso online: | https://arxiv.org/abs/2601.01115 |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866918271000772608 |
|---|---|
| author | Shukla, Gaurav K. Miura, Yoshio Singh, Mayank K. Isogami, Shinji |
| author_facet | Shukla, Gaurav K. Miura, Yoshio Singh, Mayank K. Isogami, Shinji |
| contents | The orbital Hall effect (OHE) in light transition metals offers a promising route to generate orbital torques for efficient magnetization control, providing an alternative to conventional spin Hall effect approaches that rely on heavy metals. We demonstrate perpendicular magnetization switching in [Co/Pt]3 multilayers driven by the OHE in a light 3d transition metal nitride, VN, with 111-texture of face-center cubic structure. Second harmonic Hall measurement reveals a large torque efficiency of -0.41 in the VN(7.5 nm)/[Co(0.35nm)/Pt(0.3 nm)]3, which significantly surpasses that in the control samples with Co, Py, and CoFeB ferromagnets, suggesting strong conversion of orbital current originating from VN to spin current by [Co/Pt]3 ferromagnet. Full switching by in-plane current is achieved with an in-plane magnetic field, while partial field-free switching occurs without it. The critical current density for the switching is found to be comparable to that of the W-based spin-orbit torque device. First-principles calculations confirm a large orbital Hall conductivity in VN, with a small spin Hall conductivity around the Fermi energy. Our results highlight the potential in the combination of light 3d transition metal nitrides and Co/Pt ferromagnetic multilayer with 111-texture to maximize the magnetization switching efficiency of orbitronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2601_01115 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Efficient magnetization switching driven by orbital torque originating from light 3d-transition-metal nitrides Shukla, Gaurav K. Miura, Yoshio Singh, Mayank K. Isogami, Shinji Materials Science The orbital Hall effect (OHE) in light transition metals offers a promising route to generate orbital torques for efficient magnetization control, providing an alternative to conventional spin Hall effect approaches that rely on heavy metals. We demonstrate perpendicular magnetization switching in [Co/Pt]3 multilayers driven by the OHE in a light 3d transition metal nitride, VN, with 111-texture of face-center cubic structure. Second harmonic Hall measurement reveals a large torque efficiency of -0.41 in the VN(7.5 nm)/[Co(0.35nm)/Pt(0.3 nm)]3, which significantly surpasses that in the control samples with Co, Py, and CoFeB ferromagnets, suggesting strong conversion of orbital current originating from VN to spin current by [Co/Pt]3 ferromagnet. Full switching by in-plane current is achieved with an in-plane magnetic field, while partial field-free switching occurs without it. The critical current density for the switching is found to be comparable to that of the W-based spin-orbit torque device. First-principles calculations confirm a large orbital Hall conductivity in VN, with a small spin Hall conductivity around the Fermi energy. Our results highlight the potential in the combination of light 3d transition metal nitrides and Co/Pt ferromagnetic multilayer with 111-texture to maximize the magnetization switching efficiency of orbitronic devices. |
| title | Efficient magnetization switching driven by orbital torque originating from light 3d-transition-metal nitrides |
| topic | Materials Science |
| url | https://arxiv.org/abs/2601.01115 |