Symmetric topological Mott insulator and Mott semimetal
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arXiv
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| Format: | Preprint |
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2026
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| _version_ | 1866917185937473536 |
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| author | Zhou, Boran Zhang, Ya-Hui |
| author_facet | Zhou, Boran Zhang, Ya-Hui |
| contents | Correlated physics in nearly flat topological bands is a central theme in the study of moiré materials. While ground states at integer fillings are typically identified as quantum Hall ferromagnets within a Hartree-Fock framework, we propose the existence of symmetric topological Mott insulators (STMIs) that transcend this Slater determinant picture. Focusing on half-filling of each flavor per unit cell, we demonstrate the existence of STMIs which exhibit a quantized charge or spin Hall response. We first establish this phase in a bilayer Haldane-Hubbard model with localized orbitals on the $A$ sublattice and dispersive band on the $B$ sublattice. Starting from a trivial Mott insulator on the $A$ sublattice, tuning the sublattice potential drives a Bose-Einstein-condensation (BEC) to Bardeen-Cooper-Schrieffer (BCS) transition of the associated $p-\mathrm{i}p$ exciton pairing, realizing a topological Mott insulator with $C=1$ per flavor. We further generalize this construction to a single-layer spinful model, where the resulting STMI hosts charge edge modes coexisting with bulk local moments. A Mott semimetal is identified at the quantum critical point between the STMI and the trivial Mott insulator. Finally, we discuss applications to AA-stacked MoTe$_2$/WSe$_2$, proposing a ferromagnetic Chern insulator phase as a low-temperature descendant of the symmetric Mott semimetal. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2601_02485 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Symmetric topological Mott insulator and Mott semimetal Zhou, Boran Zhang, Ya-Hui Strongly Correlated Electrons Correlated physics in nearly flat topological bands is a central theme in the study of moiré materials. While ground states at integer fillings are typically identified as quantum Hall ferromagnets within a Hartree-Fock framework, we propose the existence of symmetric topological Mott insulators (STMIs) that transcend this Slater determinant picture. Focusing on half-filling of each flavor per unit cell, we demonstrate the existence of STMIs which exhibit a quantized charge or spin Hall response. We first establish this phase in a bilayer Haldane-Hubbard model with localized orbitals on the $A$ sublattice and dispersive band on the $B$ sublattice. Starting from a trivial Mott insulator on the $A$ sublattice, tuning the sublattice potential drives a Bose-Einstein-condensation (BEC) to Bardeen-Cooper-Schrieffer (BCS) transition of the associated $p-\mathrm{i}p$ exciton pairing, realizing a topological Mott insulator with $C=1$ per flavor. We further generalize this construction to a single-layer spinful model, where the resulting STMI hosts charge edge modes coexisting with bulk local moments. A Mott semimetal is identified at the quantum critical point between the STMI and the trivial Mott insulator. Finally, we discuss applications to AA-stacked MoTe$_2$/WSe$_2$, proposing a ferromagnetic Chern insulator phase as a low-temperature descendant of the symmetric Mott semimetal. |
| title | Symmetric topological Mott insulator and Mott semimetal |
| topic | Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2601.02485 |