Conveyor-mode electron shuttling through a T-junction in Si/SiGe

Fuente: arXiv
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Autores principales: Beer, Max, Xue, Ran, Deda, Lennart, Trellenkamp, Stefan, Tu, Jhih-Sian, Surrey, Paul, Seidler, Inga, Bluhm, Hendrik, Schreiber, Lars R.
Formato: Preprint
Publicado: 2026
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author Beer, Max
Xue, Ran
Deda, Lennart
Trellenkamp, Stefan
Tu, Jhih-Sian
Surrey, Paul
Seidler, Inga
Bluhm, Hendrik
Schreiber, Lars R.
author_facet Beer, Max
Xue, Ran
Deda, Lennart
Trellenkamp, Stefan
Tu, Jhih-Sian
Surrey, Paul
Seidler, Inga
Bluhm, Hendrik
Schreiber, Lars R.
contents Conveyor-mode shuttling in gated Si/SiGe devices enables adiabatic transfer of single electrons, electron patterns and spin qubits confined in quantum dots across several microns with a scalable number of signal lines. To realize their full potential, linear shuttle lanes must connect into a two-dimensional grid with controllable routing. We introduce a T-junction device linking two independently driven shuttle lanes. Electron routing across the junction requires no extra control lines beyond the four channels per conveyor belt. We measure an inter-lane charge transfer fidelity of $F = 100.0000000^{+0}_{-9\times 10^{-7}}\,\%$ at an instantaneous electron velocity of $270\,\mathrm{mm}\,\mathrm{s}^{-1}$. The filling of 54 quantum dots is controlled by simple atomic pulses, allowing us to swap electron patterns, laying the groundwork for a native spin-qubit SWAP gate. This T-junction establishes a path towards scalable, two-dimensional quantum computing architectures with flexible spin qubit routing for quantum error correction.
format Preprint
id arxiv_https___arxiv_org_abs_2601_03942
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Conveyor-mode electron shuttling through a T-junction in Si/SiGe
Beer, Max
Xue, Ran
Deda, Lennart
Trellenkamp, Stefan
Tu, Jhih-Sian
Surrey, Paul
Seidler, Inga
Bluhm, Hendrik
Schreiber, Lars R.
Mesoscale and Nanoscale Physics
Quantum Physics
Conveyor-mode shuttling in gated Si/SiGe devices enables adiabatic transfer of single electrons, electron patterns and spin qubits confined in quantum dots across several microns with a scalable number of signal lines. To realize their full potential, linear shuttle lanes must connect into a two-dimensional grid with controllable routing. We introduce a T-junction device linking two independently driven shuttle lanes. Electron routing across the junction requires no extra control lines beyond the four channels per conveyor belt. We measure an inter-lane charge transfer fidelity of $F = 100.0000000^{+0}_{-9\times 10^{-7}}\,\%$ at an instantaneous electron velocity of $270\,\mathrm{mm}\,\mathrm{s}^{-1}$. The filling of 54 quantum dots is controlled by simple atomic pulses, allowing us to swap electron patterns, laying the groundwork for a native spin-qubit SWAP gate. This T-junction establishes a path towards scalable, two-dimensional quantum computing architectures with flexible spin qubit routing for quantum error correction.
title Conveyor-mode electron shuttling through a T-junction in Si/SiGe
topic Mesoscale and Nanoscale Physics
Quantum Physics
url https://arxiv.org/abs/2601.03942