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| Main Authors: | , , , , , |
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| Format: | Preprint |
| Published: |
2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2601.04615 |
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| _version_ | 1866915715838115840 |
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| author | Katayama, Yumiko Kobayashi, Daiki Okuma, Hikaru Yasutake, Yuhsuke Fukatsu, Susumu Ueno, Kazunori |
| author_facet | Katayama, Yumiko Kobayashi, Daiki Okuma, Hikaru Yasutake, Yuhsuke Fukatsu, Susumu Ueno, Kazunori |
| contents | Germanane (GeH) is essentially a hydrogen-terminated Ge analog of graphene with a direct gap (~1.6 eV). Record hole mobility mu_h~67,000 cm2/Vs is found at 15 K for a single allotropic cross-dimensional(D) heterointerface. This is enabled by making topotactically-transformed 2D GeH layers meet the 3D bulk Ge(111). Temperature dependence of mu_h implies metallic conduction without ionized impurity scattering between 20 K and 250 K. Sheet hole density for a Fermi sphere n_S=2.8x10^11 /cm2 agrees well with 3.0x10^11 /cm2 of Hall measurements. A 6,500% magnetoresistance at 7 T accompanies Shubnikov-de Haas oscillations visible even at 15 K. These imply single-band conduction of holes with small effective mass in the in-plane directions, invoking a 2D hole gas (2DHG) picture that allotropic cross-D heterointerface between 2D GeH and 3D Ge harbors 2D-confined high-mobility holes. Even without elaborate heteroepitaxy and modulation doping, allotropic cross-D heterostructures pave the way toward facile 2DHG creation. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2601_04615 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | High mobility holes at germanane/Ge(111) allotropic cross-dimensional heterointerface Katayama, Yumiko Kobayashi, Daiki Okuma, Hikaru Yasutake, Yuhsuke Fukatsu, Susumu Ueno, Kazunori Materials Science Germanane (GeH) is essentially a hydrogen-terminated Ge analog of graphene with a direct gap (~1.6 eV). Record hole mobility mu_h~67,000 cm2/Vs is found at 15 K for a single allotropic cross-dimensional(D) heterointerface. This is enabled by making topotactically-transformed 2D GeH layers meet the 3D bulk Ge(111). Temperature dependence of mu_h implies metallic conduction without ionized impurity scattering between 20 K and 250 K. Sheet hole density for a Fermi sphere n_S=2.8x10^11 /cm2 agrees well with 3.0x10^11 /cm2 of Hall measurements. A 6,500% magnetoresistance at 7 T accompanies Shubnikov-de Haas oscillations visible even at 15 K. These imply single-band conduction of holes with small effective mass in the in-plane directions, invoking a 2D hole gas (2DHG) picture that allotropic cross-D heterointerface between 2D GeH and 3D Ge harbors 2D-confined high-mobility holes. Even without elaborate heteroepitaxy and modulation doping, allotropic cross-D heterostructures pave the way toward facile 2DHG creation. |
| title | High mobility holes at germanane/Ge(111) allotropic cross-dimensional heterointerface |
| topic | Materials Science |
| url | https://arxiv.org/abs/2601.04615 |