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| Main Authors: | , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2601.04724 |
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| _version_ | 1866913057208270848 |
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| author | Avila, L. B. de Leuze, O. Pohlitz, M. Villena, M. A Torres-Cavanillas, Ramon Ducarme, C. Temporao, A. Lopes Coppée, T. G. Moureaux, A. Arib, S. Coronado, Eugenio Müller, C. K. Roldán, J. B. Hackens, B. Araujo, F. Abreu |
| author_facet | Avila, L. B. de Leuze, O. Pohlitz, M. Villena, M. A Torres-Cavanillas, Ramon Ducarme, C. Temporao, A. Lopes Coppée, T. G. Moureaux, A. Arib, S. Coronado, Eugenio Müller, C. K. Roldán, J. B. Hackens, B. Araujo, F. Abreu |
| contents | K-ion intercalation in Prussian blue analogs (PBAs) is a well-established charge storage mechanism in potassium-ion batteries; here, we demonstrate that this same ion intercalation process is the basis for nanoscale resistive switching behavior in PBA-base memristive devices. Using C-AFM, we directly visualize and electrically control this intercalation process within sub-100 nm volumes, revealing reversible, localized conductance modulation driven by K-ion intercalation and Fe^(2+)/Fe^(3+) redox reconfiguration. This nanoscale operability highlights the exceptional potential of PBAs for high-scalable and low-dimension memristor-based devices integration. Due to their modular composition, PBAs constitute a chemically rich, earth-abundant materials platform whose electronic and ionic properties can be precisely tuned for specific device functions. K-ion intercalation PBA-based memristor devices, with their single-step, aqueous, and room-temperature fabrication, enable low-cost, large-scale processing compatible with CMOS, without any additional post-fabrication processing. Our findings establish PBAs as a new class of intercalation memristors with scalable nanoscale switching and exceptional materials versatility, toward highly integrated neuromorphic and non-volatile memory technologies. This work provides the first demonstration of intercalation-driven resistive switching under ultrafast voltage sweeps, with PW operating up to 200 V/s and PB up to 50 V/s. This unprecedented speed establishes PBAs as a distinct, high-rate class of K-ion intercalation memristors suitable for fast, high-density neuromorphic and memory applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2601_04724 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Nanoscale resistive switching in electrodeposited MOF Prussian blue analogs driven by K-ion intercalation probed by C-AFM Avila, L. B. de Leuze, O. Pohlitz, M. Villena, M. A Torres-Cavanillas, Ramon Ducarme, C. Temporao, A. Lopes Coppée, T. G. Moureaux, A. Arib, S. Coronado, Eugenio Müller, C. K. Roldán, J. B. Hackens, B. Araujo, F. Abreu Materials Science Mesoscale and Nanoscale Physics K-ion intercalation in Prussian blue analogs (PBAs) is a well-established charge storage mechanism in potassium-ion batteries; here, we demonstrate that this same ion intercalation process is the basis for nanoscale resistive switching behavior in PBA-base memristive devices. Using C-AFM, we directly visualize and electrically control this intercalation process within sub-100 nm volumes, revealing reversible, localized conductance modulation driven by K-ion intercalation and Fe^(2+)/Fe^(3+) redox reconfiguration. This nanoscale operability highlights the exceptional potential of PBAs for high-scalable and low-dimension memristor-based devices integration. Due to their modular composition, PBAs constitute a chemically rich, earth-abundant materials platform whose electronic and ionic properties can be precisely tuned for specific device functions. K-ion intercalation PBA-based memristor devices, with their single-step, aqueous, and room-temperature fabrication, enable low-cost, large-scale processing compatible with CMOS, without any additional post-fabrication processing. Our findings establish PBAs as a new class of intercalation memristors with scalable nanoscale switching and exceptional materials versatility, toward highly integrated neuromorphic and non-volatile memory technologies. This work provides the first demonstration of intercalation-driven resistive switching under ultrafast voltage sweeps, with PW operating up to 200 V/s and PB up to 50 V/s. This unprecedented speed establishes PBAs as a distinct, high-rate class of K-ion intercalation memristors suitable for fast, high-density neuromorphic and memory applications. |
| title | Nanoscale resistive switching in electrodeposited MOF Prussian blue analogs driven by K-ion intercalation probed by C-AFM |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2601.04724 |