Electronic structure of Sn(1-x)Mn(x)Te semiconducting solid solution: a resonant photoemission study

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Hauptverfasser: Guziewicz, Elzbieta, Orlowski, Bronislaw A., Kowalski, Bogdan J.
Format: Preprint
Veröffentlicht: 2026
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author Guziewicz, Elzbieta
Orlowski, Bronislaw A.
Kowalski, Bogdan J.
author_facet Guziewicz, Elzbieta
Orlowski, Bronislaw A.
Kowalski, Bogdan J.
contents Manganese-doped tin telluride, Sn(1-x)Mn(x)Te, initially investigated as diluted magnetic semiconductor, has recently attracted considerable attention as a prospective thermoelectric material. The introduction of Mn was found to modify the valence band electronic structure, resulting in an improvement in the Seebeck coefficient and thus, the figure of merit (ZT). In the paper, we present a synchrotron radiation study of the electronic band structure of Sn(0.9)Mn(0.1)Te by resonant photoemission. The contribution of the Mn3d electrons to the valence band (VB), calculated as the difference between the Energy Distribution Curves (EDCs) taken at the maximum and minimum of the Fano resonance for the Mn3p - Mn3d absorption threshold, shows a contribution at the VB edge, a dominant maximum at 4 eV, as well as a wide structure between 7 and 11 eV. Moreover, comparison with undoped SnTe reveals strong renormalization of the Sn5p and Te5p electronic states, which certainly influences the shape of the upper part of the valence band and electron effective mass.
format Preprint
id arxiv_https___arxiv_org_abs_2601_05061
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Electronic structure of Sn(1-x)Mn(x)Te semiconducting solid solution: a resonant photoemission study
Guziewicz, Elzbieta
Orlowski, Bronislaw A.
Kowalski, Bogdan J.
Materials Science
Manganese-doped tin telluride, Sn(1-x)Mn(x)Te, initially investigated as diluted magnetic semiconductor, has recently attracted considerable attention as a prospective thermoelectric material. The introduction of Mn was found to modify the valence band electronic structure, resulting in an improvement in the Seebeck coefficient and thus, the figure of merit (ZT). In the paper, we present a synchrotron radiation study of the electronic band structure of Sn(0.9)Mn(0.1)Te by resonant photoemission. The contribution of the Mn3d electrons to the valence band (VB), calculated as the difference between the Energy Distribution Curves (EDCs) taken at the maximum and minimum of the Fano resonance for the Mn3p - Mn3d absorption threshold, shows a contribution at the VB edge, a dominant maximum at 4 eV, as well as a wide structure between 7 and 11 eV. Moreover, comparison with undoped SnTe reveals strong renormalization of the Sn5p and Te5p electronic states, which certainly influences the shape of the upper part of the valence band and electron effective mass.
title Electronic structure of Sn(1-x)Mn(x)Te semiconducting solid solution: a resonant photoemission study
topic Materials Science
url https://arxiv.org/abs/2601.05061