Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates

Fuente: arXiv

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Bibliographic Details
Main Authors:	Orfao, B., Daher, M. Abou, Bouillaud, H., Roelens, Y., Prystawko, P., Kucharski, R., Bockowski, M., Zaknoune, M.
Format:	Preprint
Published:	2026
Subjects:	Applied Physics
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2601.05958