Novel High-Radiopurity Doped Amorphous Silicon Resistors for Low-Background Detectors
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arXiv
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2026
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| _version_ | 1866914503129563136 |
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| author | Anker, A. Rowson, P. C. Skarpaas, K. Tsitrin, S. Arnquist, I. J. Horkley, L. Kenneth S. Pagani, L. Schlieder, T. D. van Bruggen, E. Kachru, P. Pocar, A. Yazbek, N. |
| author_facet | Anker, A. Rowson, P. C. Skarpaas, K. Tsitrin, S. Arnquist, I. J. Horkley, L. Kenneth S. Pagani, L. Schlieder, T. D. van Bruggen, E. Kachru, P. Pocar, A. Yazbek, N. |
| contents | We present the results of a study of lightly doped amorphous silicon used as a resistive medium for high-radiopurity resistors in nuclear and particle physics research instrumentation. Prototypes are produced for a Time Projection Chamber design for the nEXO neutrinoless double-beta decay search experiment that meet requirements for ultra-high radiopurity, good mechanical, cryogenic and high voltage performance, as well as useful vacuum ultraviolet (VUV) reflectivity. Further study is warranted to refine production methods and to confirm that the technology used here is useful for more general applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2601_05985 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Novel High-Radiopurity Doped Amorphous Silicon Resistors for Low-Background Detectors Anker, A. Rowson, P. C. Skarpaas, K. Tsitrin, S. Arnquist, I. J. Horkley, L. Kenneth S. Pagani, L. Schlieder, T. D. van Bruggen, E. Kachru, P. Pocar, A. Yazbek, N. Instrumentation and Detectors High Energy Physics - Experiment Nuclear Experiment We present the results of a study of lightly doped amorphous silicon used as a resistive medium for high-radiopurity resistors in nuclear and particle physics research instrumentation. Prototypes are produced for a Time Projection Chamber design for the nEXO neutrinoless double-beta decay search experiment that meet requirements for ultra-high radiopurity, good mechanical, cryogenic and high voltage performance, as well as useful vacuum ultraviolet (VUV) reflectivity. Further study is warranted to refine production methods and to confirm that the technology used here is useful for more general applications. |
| title | Novel High-Radiopurity Doped Amorphous Silicon Resistors for Low-Background Detectors |
| topic | Instrumentation and Detectors High Energy Physics - Experiment Nuclear Experiment |
| url | https://arxiv.org/abs/2601.05985 |