Synthesis of epitaxial TaO$_2$ thin films on Al$_2$O$_3$ by suboxide molecular-beam epitaxy and thermal laser epitaxy

Fuente: arXiv
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Autori principali: Birkhölzer, Yorick A., Park, Anna S., Schnitzer, Noah, Kaaret, Jeffrey Z., Gregory, Benjamin Z., Kraay, Tomas A., Schwaigert, Tobias, Barone, Matthew R., Faeth, Brendan D., Hensling, Felix V. E., Bosch, Iris C. G. van den, Kiens, Ellen M., Baeumer, Christoph, Bergamasco, Enrico, Grüninger, Markus, Bordovalos, Alexander, Chaulagain, Suresh, Podraza, Nikolas J., Tokarz, Waldemar, Tabis, Wojciech, Wahila, Matthew J., Sarker, Suchismita, Pollock, Christopher J., Shang, Shun-Li, Liu, Zi-Kui, Artrith, Nongnuch, de Groot, Frank M. F., Benedek, Nicole A., Singer, Andrej, Muller, David A., Schlom, Darrell G.
Natura: Preprint
Pubblicazione: 2026
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author Birkhölzer, Yorick A.
Park, Anna S.
Schnitzer, Noah
Kaaret, Jeffrey Z.
Gregory, Benjamin Z.
Kraay, Tomas A.
Schwaigert, Tobias
Barone, Matthew R.
Faeth, Brendan D.
Hensling, Felix V. E.
Bosch, Iris C. G. van den
Kiens, Ellen M.
Baeumer, Christoph
Bergamasco, Enrico
Grüninger, Markus
Bordovalos, Alexander
Chaulagain, Suresh
Podraza, Nikolas J.
Tokarz, Waldemar
Tabis, Wojciech
Wahila, Matthew J.
Sarker, Suchismita
Pollock, Christopher J.
Shang, Shun-Li
Liu, Zi-Kui
Artrith, Nongnuch
de Groot, Frank M. F.
Benedek, Nicole A.
Singer, Andrej
Muller, David A.
Schlom, Darrell G.
author_facet Birkhölzer, Yorick A.
Park, Anna S.
Schnitzer, Noah
Kaaret, Jeffrey Z.
Gregory, Benjamin Z.
Kraay, Tomas A.
Schwaigert, Tobias
Barone, Matthew R.
Faeth, Brendan D.
Hensling, Felix V. E.
Bosch, Iris C. G. van den
Kiens, Ellen M.
Baeumer, Christoph
Bergamasco, Enrico
Grüninger, Markus
Bordovalos, Alexander
Chaulagain, Suresh
Podraza, Nikolas J.
Tokarz, Waldemar
Tabis, Wojciech
Wahila, Matthew J.
Sarker, Suchismita
Pollock, Christopher J.
Shang, Shun-Li
Liu, Zi-Kui
Artrith, Nongnuch
de Groot, Frank M. F.
Benedek, Nicole A.
Singer, Andrej
Muller, David A.
Schlom, Darrell G.
contents Tantalum dioxide (TaO2) is a metastable tantalum compound. Here, we report the epitaxial stabilization of TaO2 on Al2O3 (1-102) (r-plane sapphire) substrates using suboxide molecular-beam epitaxy (MBE) and thermal laser epitaxy (TLE), demonstrating single-oriented, monodomain growth of anisotropically strained thin films. Microstructural investigation is performed using synchrotron X-ray diffraction and scanning transmission electron microscopy. The tetravalent oxidation state of tantalum is confirmed using X-ray absorption and photoemission spectroscopy as well as electron energy-loss spectroscopy. Optical properties are investigated via spectroscopic ellipsometry and reveal a 0.3 eV Mott gap of the tantalum 5d electrons. Density-functional theory and group theoretical arguments are used to evaluate the limited stability of the rutile phase and reveal the potential to unlock a hidden metal-insulator transition concomitant with a structural phase transition to a distorted rutile phase, akin to NbO2. Our work expands the understanding of tantalum oxides and paves the way for their integration into next-generation electronic and photonic devices.
format Preprint
id arxiv_https___arxiv_org_abs_2601_06716
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Synthesis of epitaxial TaO$_2$ thin films on Al$_2$O$_3$ by suboxide molecular-beam epitaxy and thermal laser epitaxy
Birkhölzer, Yorick A.
Park, Anna S.
Schnitzer, Noah
Kaaret, Jeffrey Z.
Gregory, Benjamin Z.
Kraay, Tomas A.
Schwaigert, Tobias
Barone, Matthew R.
Faeth, Brendan D.
Hensling, Felix V. E.
Bosch, Iris C. G. van den
Kiens, Ellen M.
Baeumer, Christoph
Bergamasco, Enrico
Grüninger, Markus
Bordovalos, Alexander
Chaulagain, Suresh
Podraza, Nikolas J.
Tokarz, Waldemar
Tabis, Wojciech
Wahila, Matthew J.
Sarker, Suchismita
Pollock, Christopher J.
Shang, Shun-Li
Liu, Zi-Kui
Artrith, Nongnuch
de Groot, Frank M. F.
Benedek, Nicole A.
Singer, Andrej
Muller, David A.
Schlom, Darrell G.
Materials Science
Tantalum dioxide (TaO2) is a metastable tantalum compound. Here, we report the epitaxial stabilization of TaO2 on Al2O3 (1-102) (r-plane sapphire) substrates using suboxide molecular-beam epitaxy (MBE) and thermal laser epitaxy (TLE), demonstrating single-oriented, monodomain growth of anisotropically strained thin films. Microstructural investigation is performed using synchrotron X-ray diffraction and scanning transmission electron microscopy. The tetravalent oxidation state of tantalum is confirmed using X-ray absorption and photoemission spectroscopy as well as electron energy-loss spectroscopy. Optical properties are investigated via spectroscopic ellipsometry and reveal a 0.3 eV Mott gap of the tantalum 5d electrons. Density-functional theory and group theoretical arguments are used to evaluate the limited stability of the rutile phase and reveal the potential to unlock a hidden metal-insulator transition concomitant with a structural phase transition to a distorted rutile phase, akin to NbO2. Our work expands the understanding of tantalum oxides and paves the way for their integration into next-generation electronic and photonic devices.
title Synthesis of epitaxial TaO$_2$ thin films on Al$_2$O$_3$ by suboxide molecular-beam epitaxy and thermal laser epitaxy
topic Materials Science
url https://arxiv.org/abs/2601.06716