Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures
Fuente:
arXiv
Enregistré dans:
| Auteurs principaux: | , , , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Publié: |
2026
|
| Sujets: | |
| Accès en ligne: | |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| _version_ | 1866917195666161664 |
|---|---|
| author | Ma, Jingrui Kang, Yuan Wu, Rui Liu, Zheng Li, Zong-Hu Hao, Tian-Yue Kong, Zhen-Zhen Wang, Gui-Lei Xu, Yong-Qiang Cai, Ran-Ran Wang, Bao-Chuan Li, Hai-Ou Cao, Gang Guo, Guo-Ping |
| author_facet | Ma, Jingrui Kang, Yuan Wu, Rui Liu, Zheng Li, Zong-Hu Hao, Tian-Yue Kong, Zhen-Zhen Wang, Gui-Lei Xu, Yong-Qiang Cai, Ran-Ran Wang, Bao-Chuan Li, Hai-Ou Cao, Gang Guo, Guo-Ping |
| contents | Traps at the semiconductor-oxide interface are considered as a major source of instability in strained Ge/SiGe quantum devices, yet the quantified study of their cryogenic behavior remains limited. In this work, we investigate interface-state trapping using Hall-bar field-effect transistors fabricated on strained Ge/SiGe heterostructures. Combining transport measurements with long-term stabilization and Schrödinger-Poisson modelling, we reconstruct the gradual filling process of interface states at cryogenic condition. Using the calculated valence band profiles, we further evaluate the tunneling current density between the quantum well and the semiconductor-oxide interface. Our calculation demonstrates that the total tunneling current is consistent with a crossover from trap-assisted-tunneling-dominated transport to Fowler-Nordheim-tunneling-dominated transport under different gate bias regimes. These results refine the conventional Fowler-Nordheim-based picture of interface trapping in strained Ge/SiGe heterostructures and provide guidelines for improving Ge-based quantum device performance by improving barrier crystalline qualities and reducing dislocation-related trap densities. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2601_06927 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures Ma, Jingrui Kang, Yuan Wu, Rui Liu, Zheng Li, Zong-Hu Hao, Tian-Yue Kong, Zhen-Zhen Wang, Gui-Lei Xu, Yong-Qiang Cai, Ran-Ran Wang, Bao-Chuan Li, Hai-Ou Cao, Gang Guo, Guo-Ping Mesoscale and Nanoscale Physics Traps at the semiconductor-oxide interface are considered as a major source of instability in strained Ge/SiGe quantum devices, yet the quantified study of their cryogenic behavior remains limited. In this work, we investigate interface-state trapping using Hall-bar field-effect transistors fabricated on strained Ge/SiGe heterostructures. Combining transport measurements with long-term stabilization and Schrödinger-Poisson modelling, we reconstruct the gradual filling process of interface states at cryogenic condition. Using the calculated valence band profiles, we further evaluate the tunneling current density between the quantum well and the semiconductor-oxide interface. Our calculation demonstrates that the total tunneling current is consistent with a crossover from trap-assisted-tunneling-dominated transport to Fowler-Nordheim-tunneling-dominated transport under different gate bias regimes. These results refine the conventional Fowler-Nordheim-based picture of interface trapping in strained Ge/SiGe heterostructures and provide guidelines for improving Ge-based quantum device performance by improving barrier crystalline qualities and reducing dislocation-related trap densities. |
| title | Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2601.06927 |