Giant Hole-doping in 2H-WSe2 via Ta Substitution
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arXiv
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| Autori principali: | , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2026
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| _version_ | 1866911371510153216 |
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| author | Kang, Minhee Choi, Woojin Hwang, Choongyu Hwang, Jinwoong |
| author_facet | Kang, Minhee Choi, Woojin Hwang, Choongyu Hwang, Jinwoong |
| contents | The family of transition metal dichalcogenides (TMDCs) has been regarded as promising candidates for future electronics, valleytronics, spintronics, and optoelectronics. While most of TMDCs are intrinsic n-type semiconductors due to electron donation from chalcogen vacancies, realizing intrinsic p-type TMDCs and achieving precise control over their electronic properties remain challenging. In this work, we introduce a powerful approach to obtain intrinsic hole doping by substituting Ta atom into 2H-WSe2. A combining study of molecular beam epitaxy growth and in-situ angle-resolved photoemission spectroscopy characterization clearly reveals that Ta substitution induces a significant hole doping and provides a possible way of a semiconductor-to-metal transition in 2H-WSe2. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2601_08284 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Giant Hole-doping in 2H-WSe2 via Ta Substitution Kang, Minhee Choi, Woojin Hwang, Choongyu Hwang, Jinwoong Materials Science The family of transition metal dichalcogenides (TMDCs) has been regarded as promising candidates for future electronics, valleytronics, spintronics, and optoelectronics. While most of TMDCs are intrinsic n-type semiconductors due to electron donation from chalcogen vacancies, realizing intrinsic p-type TMDCs and achieving precise control over their electronic properties remain challenging. In this work, we introduce a powerful approach to obtain intrinsic hole doping by substituting Ta atom into 2H-WSe2. A combining study of molecular beam epitaxy growth and in-situ angle-resolved photoemission spectroscopy characterization clearly reveals that Ta substitution induces a significant hole doping and provides a possible way of a semiconductor-to-metal transition in 2H-WSe2. |
| title | Giant Hole-doping in 2H-WSe2 via Ta Substitution |
| topic | Materials Science |
| url | https://arxiv.org/abs/2601.08284 |