Image de couverture de livre

Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications

Fuente: arXiv

Enregistré dans:

Détails bibliographiques
Auteurs principaux:	Jmerik, V. N., Nechaev, D. V., Evropeitsev, E. A., Roginskii, E. M., Semenov, A. N., Yagovkina, M. A., Alekseev, P. A., Kozlovsky, V. I., Zverev, M. M., Gamov, N. A., Wang, Tao, Wang, Xinqiang, Shubina, T. V., Toropov, A. A.
Format:	Preprint
Publié:	2026
Sujets:	Materials Science
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

Documents similaires

Far-UVC Field Emission Device at 226 nm and its Sub-Nanometer thick GaN/AlN Quantum Well Anode
par: Boiko, D. L., et autres
Publié: (2025)

Discovery of Slot Plasma Excitations in a AlGaN/GaN Plasmonic Crystal
par: Khisameeva, A. R., et autres
Publié: (2025)

Coherent superposition of emitted and resonantly scattered photons from a two-level system driven by an even-$π$ pulse
par: Krainov, I. V., et autres
Publié: (2025)

Dynamical screening effects on formation of swift heavy ions damage in GaN
par: Moskalets, S. V., et autres
Publié: (2026)

Natural width of the superconducting transition in epitaxial TiN films
par: Baeva, E. M., et autres
Publié: (2022)

Deviation from thermodynamic equilibrium at the initial stage of the GaN growth by metalorganic chemical vapor deposition (MOCVD)
par: V.A. Elyukhin
Publié: (2001)

Ab Initio Calculation of the (100) and (110) Surface Phonon Dispersion of GaAs and GaN
par: A. M. Santos
Publié: (2004)

Elastic modeling and total energy calculations of the structural characteristics of "free-standing",periodic, pseudomorphic GaN/AlN superlattices
par: Karakostas, Th., et autres
Publié: (2025)

Direct observation of split-mode exciton-polaritons in a single MoS$_2$ nanotube
par: Galimov, A. I., et autres
Publié: (2023)

Low-temperature electron dephasing rates indicate magnetic disorder in superconducting TiN films
par: Lomakin, A. I., et autres
Publié: (2025)

Quantum Effects at a Spin-Flop Transition in the Antiferromagnetic Topological Insulator MnBi$_2$Te$_4$
par: Val'kov, V. V., et autres
Publié: (2025)

Influence ScN protective thin layer on the superconducting properties of ultrathin NbN films
par: Porokhov, N. V., et autres
Publié: (2024)

Impact of AlN buffer thickness on electrical and thermal characteristics of AlGaN/GaN/AlN HEMTs
par: Kim, Minho, et autres
Publié: (2025)

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates
par: Bhuiyan, A F M Anhar Uddin, et autres
Publié: (2022)

Fluctuation Mechanism of Single-Ion Anisotropy of Topological Insulator MnBi$_2$Te$_4$
par: Val'kov, V. V., et autres
Publié: (2026)

A Review on the Zone Refining Process Technology toward Ultra‐Purification of Gallium for GaAs/GaN‐based Optoelectronic Device Applications
par: Kaustab Ghosh, et autres
Publié: (2024)

Effect of the Twist Crystallinity of N‐Polar AlN Underlayer on the Electrical Properties of GaN/AlN Structures
par: Taketo Kowaki, et autres
Publié: (2024)

Ga 2 O 3 /(Al)GaN Heterostructures for Next Generation Power Electronics
par: Manijeh Razeghi, et autres
Publié: (2026)

Shubnikov-de Haas oscillations in coherently strained AlN/GaN/AlN quantum wells on bulk AlN substrates
par: Chen, Yu-Hsin, et autres
Publié: (2025)

Lattice dynamics and mixing of polar phonons in the rare-earth orthoferrite TbFeO$_{3}$
par: Dubrovin, R. M., et autres
Publié: (2024)

Band Structure and Bulk Modulus of GaN
par: A. Mahmood
Publié: (1999)

Предварительные результаты изучения структуры запасов балтийского шпрота генетико-биохимическими методами
par: Kozlovsky, A.
Publié: (1988)

Composition of basalts from the north part of the Bougault anomaly, Mid-Atlantic Ridge 15°N
par: Sharapov, V N, et autres
Publié: (2000)

Electrically Tunable Room‐Temperature Microwave Oscillations in GaN/AlN Triple‐Barrier Resonant Tunneling Diodes
par: Jimy Encomendero, et autres
Publié: (2026)

Spintronic THz emitters based on NiCu alloys
par: Karashtin, E. A., et autres
Publié: (2026)

Tracking the creation of single photon emitters in AlN by implantation and annealing
par: Yağcı, H. B., et autres
Publié: (2025)

A unified quasiparticle approach to the theory of strongly correlated electron liquids
par: Khodel, V. A., et autres
Publié: (2023)

4-Pixel NbN Hot-Electron Bolometer Integrated in a Si$_3$N$_4$ Planar Optical Waveguide with On-Chip Fiber-Alignment Trench
par: Vovk, N. A., et autres
Publié: (2026)

Plasmon manipulation by exchange magnetic field in two-dimensional spin-orbit coupled electronic systems: A higher-order relativistic k.p study
par: Nechaev, I. A., et autres
Publié: (2026)

Extreme forcing and wave dynamics in weakly nonlocally coupled excitable FitzHugh-Nagumo systems
par: Semenova, N. I., et autres
Publié: (2026)

I–V and C–V characteristics and interface electron states of Al2O3/AlGaN/GaN structures
par: Еnisherlova, Kira L., et autres
Publié: (2025)

Neural-network reconstruction of THz transmission spectra using electrically tunable AlGaN/GaN plasmonic-crystal analyzer
par: Witkowska, A., et autres
Publié: (2026)

Effect of GaN substrate thickness on the optical field of InGaN laser diodes
par: J. A. Martín
Publié: (2018)

Stimulated down-conversion of single-photon emission in a quantum dot placed in a target-frequency microcavity
par: Krainov, I. V., et autres
Publié: (2024)

DC Conductivity and Mobility of a Degenerate Electron Gas in Heavily Doped GaN Crystals at Room Temperature
par: Nikolai A. Poklonski, et autres
Publié: (2026)

(Table 1.15) Composition of glassy basalts from the north part of the Bougault anomaly, Mid-Atlantic Ridge 15°N
par: Sharapov, V N, et autres
Publié: (2000)

GaN HEMT based high energy particles detection preamplifier
par: Orr, G., et autres
Publié: (2021)

Intersubband optical absorption in the GaN/AlN qunatum wire with donor-doping
par: Ortakaya, Sami
Publié: (2025)

Engineering chlorine-based emitters in silicon carbide for telecom-band quantum technologies
par: Anisimov, A. N., et autres
Publié: (2025)

Potential of Graphene/AlGaN/GaN heterostructures to study the drag and two-stream instability effects
par: Rehman, A., et autres
Publié: (2026)