Charge Transport and Multiplication in Lateral Amorphous Selenium Devices Under Cryogenic Conditions
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arXiv
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| Auteurs principaux: | , , , , , , , , |
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| Format: | Preprint |
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2026
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| _version_ | 1866917232056991744 |
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| author | Rooks, M. Abbaszadeh, S. Asaadi, J. Chirayath, V. A. García-Peris, M. Á. Gramellini, E. Hellier, K. Sudarsan, B. Tzoka, I. |
| author_facet | Rooks, M. Abbaszadeh, S. Asaadi, J. Chirayath, V. A. García-Peris, M. Á. Gramellini, E. Hellier, K. Sudarsan, B. Tzoka, I. |
| contents | Cryogenic photon sensing for high-energy physics motivates photosensor technologies that combine large-area scalability with internal gain and stable operation at low temperature. Amorphous selenium is a promising photoconductor, yet its field- and temperature-dependent transport and avalanche response in lateral geometries have not been systematically established. This work reports field-resolved photocurrent measurements of lateral a-Se devices from 93 K to 297 K under 401 nm excitation at fields up to 120 V/um. Below avalanche onset, the external quantum efficiency was described by the Onsager model, yielding effective post-thermalization separations that decrease with decreasing temperature. The field-assisted detrapping region was evaluated using several transport models, with the data favoring field-assisted hopping and thermally-assisted tunneling as the mechanisms that best capture the temperature evolution of the photocurrent. The boundaries between field-assisted detrapping, transport-limited conduction, and avalanche shift with temperature; at 93 K the response transitions directly from detrapping into avalanche. Avalanche multiplication was analyzed using the Lucky-drift model. These results provide the first systematic characterization of cryogenic avalanche behavior in lateral a-Se detectors and establish quantitative trends relevant to low-temperature, high-gain photodetector design. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2601_08971 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Charge Transport and Multiplication in Lateral Amorphous Selenium Devices Under Cryogenic Conditions Rooks, M. Abbaszadeh, S. Asaadi, J. Chirayath, V. A. García-Peris, M. Á. Gramellini, E. Hellier, K. Sudarsan, B. Tzoka, I. Materials Science Disordered Systems and Neural Networks Cryogenic photon sensing for high-energy physics motivates photosensor technologies that combine large-area scalability with internal gain and stable operation at low temperature. Amorphous selenium is a promising photoconductor, yet its field- and temperature-dependent transport and avalanche response in lateral geometries have not been systematically established. This work reports field-resolved photocurrent measurements of lateral a-Se devices from 93 K to 297 K under 401 nm excitation at fields up to 120 V/um. Below avalanche onset, the external quantum efficiency was described by the Onsager model, yielding effective post-thermalization separations that decrease with decreasing temperature. The field-assisted detrapping region was evaluated using several transport models, with the data favoring field-assisted hopping and thermally-assisted tunneling as the mechanisms that best capture the temperature evolution of the photocurrent. The boundaries between field-assisted detrapping, transport-limited conduction, and avalanche shift with temperature; at 93 K the response transitions directly from detrapping into avalanche. Avalanche multiplication was analyzed using the Lucky-drift model. These results provide the first systematic characterization of cryogenic avalanche behavior in lateral a-Se detectors and establish quantitative trends relevant to low-temperature, high-gain photodetector design. |
| title | Charge Transport and Multiplication in Lateral Amorphous Selenium Devices Under Cryogenic Conditions |
| topic | Materials Science Disordered Systems and Neural Networks |
| url | https://arxiv.org/abs/2601.08971 |