Effect of Number of Bilayers on the Anomalous Hall Effect in [Si/Fe]N Multilayers
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arXiv
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| Format: | Preprint |
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2026
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| _version_ | 1866918290449760256 |
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| author | Das, Sudhansu Sekhar Kumar, M. Senthil |
| author_facet | Das, Sudhansu Sekhar Kumar, M. Senthil |
| contents | The influence of varying the number of bilayers (N) on the anomalous Hall effect (AHE) in sputtered Si/Fe multilayers has been investigated. Both the AHE and magnetisation data reveal the in-plane magnetic anisotropy in the samples. Large enhancement of about 24 times in the saturation anomalous Hall resistance (R_Ahs) and anomalous Hall sensitivity (S) has been observed upon decreasing N from 20 to 1. When compared with the bulk Fe, the values of R_Ahs and anomalous Hall coefficient, Rs obtained for N= 1 were enhanced by about 5 and 3 orders of magnitude, respectively. The Rs follows the longitudinal electrical resistivity Rho as Rs proportional to Rho^2.1, suggesting side jump as the dominant mechanism of the AHE. The S as high as 22 Ohm/T over a wide operational field range of -8 to +8 kOe has been obtained for N = 1. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2601_10182 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Effect of Number of Bilayers on the Anomalous Hall Effect in [Si/Fe]N Multilayers Das, Sudhansu Sekhar Kumar, M. Senthil Materials Science The influence of varying the number of bilayers (N) on the anomalous Hall effect (AHE) in sputtered Si/Fe multilayers has been investigated. Both the AHE and magnetisation data reveal the in-plane magnetic anisotropy in the samples. Large enhancement of about 24 times in the saturation anomalous Hall resistance (R_Ahs) and anomalous Hall sensitivity (S) has been observed upon decreasing N from 20 to 1. When compared with the bulk Fe, the values of R_Ahs and anomalous Hall coefficient, Rs obtained for N= 1 were enhanced by about 5 and 3 orders of magnitude, respectively. The Rs follows the longitudinal electrical resistivity Rho as Rs proportional to Rho^2.1, suggesting side jump as the dominant mechanism of the AHE. The S as high as 22 Ohm/T over a wide operational field range of -8 to +8 kOe has been obtained for N = 1. |
| title | Effect of Number of Bilayers on the Anomalous Hall Effect in [Si/Fe]N Multilayers |
| topic | Materials Science |
| url | https://arxiv.org/abs/2601.10182 |