Growth and Morphology of InN Nanowires on Si<111> and Si<100> at Back-End-Of-Line Compatible Temperatures
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arXiv
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| Autori principali: | , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2026
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| _version_ | 1866909991532756992 |
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| author | Orlando-cunnac, Andrea Arnaud, Arthur Hertog, Martien Den Coccato, Ettore Calvo, Vincent Steckel, Jonathan Monroy, Eva |
| author_facet | Orlando-cunnac, Andrea Arnaud, Arthur Hertog, Martien Den Coccato, Ettore Calvo, Vincent Steckel, Jonathan Monroy, Eva |
| contents | InN nanowires were grown on Si<111> and Si<100> substrates by plasma-assisted molecular beam epitaxy using a thin AlN buffer layer at temperatures compatible with the thermal budget limitation imposed by Back-End-Of-Line processing. Reflection high-energy electron diffraction reveals different nucleation behaviors on the two substrate orientations, with higher structural disorder in the case of Si<100>. However, vertically aligned nanowires with hexagonal cross section and N polarity are obtained on both substrates. A statistical analysis of nanowire morphology as a function of growth temperature indicates similar trends in diameter, density, and length on Si<111> and Si<100>, which are explained by adatom kinetics during growth. Nanowires on Si<100> exhibit improved uniformity and reduced tapering, attributed to the different nanowire nucleation due to microstructural properties of the AlN buffer layer. The results demonstrate the feasibility of growing high-quality InN nanowires on Si<100>, supporting their potential for monolithic integration of nanowire-based photodetectors on silicon. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2601_10495 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Growth and Morphology of InN Nanowires on Si<111> and Si<100> at Back-End-Of-Line Compatible Temperatures Orlando-cunnac, Andrea Arnaud, Arthur Hertog, Martien Den Coccato, Ettore Calvo, Vincent Steckel, Jonathan Monroy, Eva Materials Science InN nanowires were grown on Si<111> and Si<100> substrates by plasma-assisted molecular beam epitaxy using a thin AlN buffer layer at temperatures compatible with the thermal budget limitation imposed by Back-End-Of-Line processing. Reflection high-energy electron diffraction reveals different nucleation behaviors on the two substrate orientations, with higher structural disorder in the case of Si<100>. However, vertically aligned nanowires with hexagonal cross section and N polarity are obtained on both substrates. A statistical analysis of nanowire morphology as a function of growth temperature indicates similar trends in diameter, density, and length on Si<111> and Si<100>, which are explained by adatom kinetics during growth. Nanowires on Si<100> exhibit improved uniformity and reduced tapering, attributed to the different nanowire nucleation due to microstructural properties of the AlN buffer layer. The results demonstrate the feasibility of growing high-quality InN nanowires on Si<100>, supporting their potential for monolithic integration of nanowire-based photodetectors on silicon. |
| title | Growth and Morphology of InN Nanowires on Si<111> and Si<100> at Back-End-Of-Line Compatible Temperatures |
| topic | Materials Science |
| url | https://arxiv.org/abs/2601.10495 |