Giant anomalous Hall effect in ultrathin Si/Fe bilayers
Fuente:
arXiv
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| Autori principali: | , |
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| Natura: | Preprint |
| Pubblicazione: |
2026
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| _version_ | 1866908769646018560 |
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| author | Das, S. S. Kumar, M. Senthil |
| author_facet | Das, S. S. Kumar, M. Senthil |
| contents | Anomalous Hall effect studies on ultrathin Si(50Angstrom)/Fe(t_Fe) bilayers were performed at 300 K. Giant enhancements of about 60 times in saturation anomalous Hall resistivity and 265 times in anomalous Hall coefficient (R_s) were observed upon decreasing the Fe layer thickness t_Fe from 200 to 10 Angstrom. The R_s observed for t_Fe = 10 Angstrom is about three orders of magnitude larger than that of bulk Fe. The scaling law between R_s and longitudinal electrical resistivity (Rho) suggests that the side jump is the dominant mechanism of the anomalous Hall effect. The observed largest Hall sensitivity of 433 Ohm/T surpasses that of the semiconducting GaAs and InAs Hall sensors already reported. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2601_11015 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Giant anomalous Hall effect in ultrathin Si/Fe bilayers Das, S. S. Kumar, M. Senthil Materials Science Anomalous Hall effect studies on ultrathin Si(50Angstrom)/Fe(t_Fe) bilayers were performed at 300 K. Giant enhancements of about 60 times in saturation anomalous Hall resistivity and 265 times in anomalous Hall coefficient (R_s) were observed upon decreasing the Fe layer thickness t_Fe from 200 to 10 Angstrom. The R_s observed for t_Fe = 10 Angstrom is about three orders of magnitude larger than that of bulk Fe. The scaling law between R_s and longitudinal electrical resistivity (Rho) suggests that the side jump is the dominant mechanism of the anomalous Hall effect. The observed largest Hall sensitivity of 433 Ohm/T surpasses that of the semiconducting GaAs and InAs Hall sensors already reported. |
| title | Giant anomalous Hall effect in ultrathin Si/Fe bilayers |
| topic | Materials Science |
| url | https://arxiv.org/abs/2601.11015 |