Visualization of Tunable Electronic Structure of Monolayer TaIrTe$_4$

Fuente: arXiv
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Autori principali: Ekahana, Sandy Adhitia, Tiwari, Aalok, Sasmal, Souvik, Cai, Zefeng, Bandapelli, Ravi Kumar, Kao, I-Hsuan, Tang, Jian, Min, Chenbo, Qian, Tiema, Watanabe, Kenji, Taniguchi, Takashi, Ni, Ni, Ma, Qiong, Jozwiak, Chris, Rotenberg, Eli, Bostwick, Aaron, Singh, Simranjeet, Marom, Noa, Katoch, Jyoti
Natura: Preprint
Pubblicazione: 2026
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author Ekahana, Sandy Adhitia
Tiwari, Aalok
Sasmal, Souvik
Cai, Zefeng
Bandapelli, Ravi Kumar
Kao, I-Hsuan
Tang, Jian
Min, Chenbo
Qian, Tiema
Watanabe, Kenji
Taniguchi, Takashi
Ni, Ni
Ma, Qiong
Jozwiak, Chris
Rotenberg, Eli
Bostwick, Aaron
Singh, Simranjeet
Marom, Noa
Katoch, Jyoti
author_facet Ekahana, Sandy Adhitia
Tiwari, Aalok
Sasmal, Souvik
Cai, Zefeng
Bandapelli, Ravi Kumar
Kao, I-Hsuan
Tang, Jian
Min, Chenbo
Qian, Tiema
Watanabe, Kenji
Taniguchi, Takashi
Ni, Ni
Ma, Qiong
Jozwiak, Chris
Rotenberg, Eli
Bostwick, Aaron
Singh, Simranjeet
Marom, Noa
Katoch, Jyoti
contents Monolayer TaIrTe$_4$ has emerged as an attractive material platform to study intriguing phenomena related to topology and strong electron correlations. Recently, strong interactions have been demonstrated to induce strain and dielectric screening tunable topological phases such as quantum spin Hall insulator (QSHI), trivial insulator, higher-order topological insulator, and metallic phase, in the ground state of monolayer TaIrTe$_4$. Moreover, charge dosing has been demonstrated to convert the QSHI into a dual QSHI state. Although the band structure of monolayer TaIrTe$_4$ is central to interpreting its topological phases in transport experiments, direct experimental access to its intrinsic electronic structure has so far remained elusive. Here we report direct measurements of the monolayer TaIrTe$_4$ band structure using spatially resolved micro-angle-resolved photoemission spectroscopy (microARPES) with micrometre-scale resolution. The observed dispersions show quantitative agreement with density functional theory calculations using the Heyd-Scuseria-Ernzerhof hybrid functional, establishing the insulating ground state and revealing no evidence for strong electronic correlations. We further uncover a pronounced electron-hole asymmetry in the doping response. Whereas hole doping is readily induced by electrostatic gating, attempts to introduce electrons via gating or alkali metal deposition do not yield a rigid upward shift of the Fermi level. Fractional charge calculations demonstrate that added electrons instead drive band renormalization and shrink the band gap. Taken together, our experimental and theoretical results identify the microscopic mechanism by which induced charges reshape the band topology of monolayer TaIrTe$_4$, showing that doping can fundamentally alter the electronic structure beyond the rigid band behaviour that is typically assumed.
format Preprint
id arxiv_https___arxiv_org_abs_2601_11504
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Visualization of Tunable Electronic Structure of Monolayer TaIrTe$_4$
Ekahana, Sandy Adhitia
Tiwari, Aalok
Sasmal, Souvik
Cai, Zefeng
Bandapelli, Ravi Kumar
Kao, I-Hsuan
Tang, Jian
Min, Chenbo
Qian, Tiema
Watanabe, Kenji
Taniguchi, Takashi
Ni, Ni
Ma, Qiong
Jozwiak, Chris
Rotenberg, Eli
Bostwick, Aaron
Singh, Simranjeet
Marom, Noa
Katoch, Jyoti
Strongly Correlated Electrons
Mesoscale and Nanoscale Physics
Materials Science
Monolayer TaIrTe$_4$ has emerged as an attractive material platform to study intriguing phenomena related to topology and strong electron correlations. Recently, strong interactions have been demonstrated to induce strain and dielectric screening tunable topological phases such as quantum spin Hall insulator (QSHI), trivial insulator, higher-order topological insulator, and metallic phase, in the ground state of monolayer TaIrTe$_4$. Moreover, charge dosing has been demonstrated to convert the QSHI into a dual QSHI state. Although the band structure of monolayer TaIrTe$_4$ is central to interpreting its topological phases in transport experiments, direct experimental access to its intrinsic electronic structure has so far remained elusive. Here we report direct measurements of the monolayer TaIrTe$_4$ band structure using spatially resolved micro-angle-resolved photoemission spectroscopy (microARPES) with micrometre-scale resolution. The observed dispersions show quantitative agreement with density functional theory calculations using the Heyd-Scuseria-Ernzerhof hybrid functional, establishing the insulating ground state and revealing no evidence for strong electronic correlations. We further uncover a pronounced electron-hole asymmetry in the doping response. Whereas hole doping is readily induced by electrostatic gating, attempts to introduce electrons via gating or alkali metal deposition do not yield a rigid upward shift of the Fermi level. Fractional charge calculations demonstrate that added electrons instead drive band renormalization and shrink the band gap. Taken together, our experimental and theoretical results identify the microscopic mechanism by which induced charges reshape the band topology of monolayer TaIrTe$_4$, showing that doping can fundamentally alter the electronic structure beyond the rigid band behaviour that is typically assumed.
title Visualization of Tunable Electronic Structure of Monolayer TaIrTe$_4$
topic Strongly Correlated Electrons
Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2601.11504