Local Structure of Epitaxial Single Crystal UO$_{2+x}$ Thin Films

Fuente: arXiv
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Main Authors: Lewis, Jarrod C., Conradson, Steven D., Wasik, Jacek, Harding, Lottie M., Nicholls, Rebecca, Laverock, Jude, Bell, Chris, Springell, Ross
Format: Preprint
Published: 2026
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author Lewis, Jarrod C.
Conradson, Steven D.
Wasik, Jacek
Harding, Lottie M.
Nicholls, Rebecca
Laverock, Jude
Bell, Chris
Springell, Ross
author_facet Lewis, Jarrod C.
Conradson, Steven D.
Wasik, Jacek
Harding, Lottie M.
Nicholls, Rebecca
Laverock, Jude
Bell, Chris
Springell, Ross
contents The influence of oxygen stoichiometry on the uranium local environment is explored in epitaxial single crystal uranium oxide thin films grown by DC magnetron sputtering. Through post-growth annealing, the stoichiometry of as-grown UO$_{2}$ films are tuned over an approximate stoichiometry range of $0.07 \leq x \leq 0.20$, estimated with X-ray photoelectron spectroscopy measurements of the U$-4f$ and O$-1s$ peaks. The local structure of the thin films are then probed using extended X-ray absorption fine structure measurements at the U $L_{3}$ absorption edge. We observe both the evolution of the U local environment of as a function of oxidation in UO$_{2+x}$, and that the near stoichiometric UO$_{2}$ film replicates the local structure of bulk UO$_{2}$ material standards well. The series of stoichiometrically varied samples highlights the non-trivial transitional behaviour of the UO$_{2+x}$ oxygen sublattice with increasing oxygen content in this stoichiometric regime, while also demonstrating the efficacy of this thin film synthesis route for actinide studies beyond their established use as idealised surfaces, which could be readily adapted for further stoichiometrically tailored material studies and UO$_{2+x}$ device fabrication.
format Preprint
id arxiv_https___arxiv_org_abs_2601_11849
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Local Structure of Epitaxial Single Crystal UO$_{2+x}$ Thin Films
Lewis, Jarrod C.
Conradson, Steven D.
Wasik, Jacek
Harding, Lottie M.
Nicholls, Rebecca
Laverock, Jude
Bell, Chris
Springell, Ross
Materials Science
The influence of oxygen stoichiometry on the uranium local environment is explored in epitaxial single crystal uranium oxide thin films grown by DC magnetron sputtering. Through post-growth annealing, the stoichiometry of as-grown UO$_{2}$ films are tuned over an approximate stoichiometry range of $0.07 \leq x \leq 0.20$, estimated with X-ray photoelectron spectroscopy measurements of the U$-4f$ and O$-1s$ peaks. The local structure of the thin films are then probed using extended X-ray absorption fine structure measurements at the U $L_{3}$ absorption edge. We observe both the evolution of the U local environment of as a function of oxidation in UO$_{2+x}$, and that the near stoichiometric UO$_{2}$ film replicates the local structure of bulk UO$_{2}$ material standards well. The series of stoichiometrically varied samples highlights the non-trivial transitional behaviour of the UO$_{2+x}$ oxygen sublattice with increasing oxygen content in this stoichiometric regime, while also demonstrating the efficacy of this thin film synthesis route for actinide studies beyond their established use as idealised surfaces, which could be readily adapted for further stoichiometrically tailored material studies and UO$_{2+x}$ device fabrication.
title Local Structure of Epitaxial Single Crystal UO$_{2+x}$ Thin Films
topic Materials Science
url https://arxiv.org/abs/2601.11849