Room temperature intrinsic anomalous Hall effect in disordered half-metallic ferromagnetic quaternary Heusler alloy CoRuFeSi
Fuente:
arXiv
Saved in:
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2026
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866912832003506176 |
|---|---|
| author | Panda, Manikantha Pradhan, Sonali S. Mishra, Prabuddha Kant Bera, Alapan Roy, Rosni Mondal, Rajib Mukhopadhyay, Soumik Kanchana, V. Paramanik, Tapas |
| author_facet | Panda, Manikantha Pradhan, Sonali S. Mishra, Prabuddha Kant Bera, Alapan Roy, Rosni Mondal, Rajib Mukhopadhyay, Soumik Kanchana, V. Paramanik, Tapas |
| contents | Quaternary Heusler alloys offer a versatile platform for engineering magnetic and topological transport phenomena through chemical flexibility and tunable disorder. Here, we report a comprehensive experimental and theoretical investigation of the magnetic, magnetotransport, and anomalous Hall properties of the quaternary Heusler alloy CoRuFeSi. The compound crystallizes in the LiMgPdSn-type structure with significant Co--Ru antisite disorder and exhibits soft ferromagnetism with a saturation magnetization of $4.21~μ_{\mathrm{B}}/\mathrm{f.u.}$ at low temperature and a Curie temperature well above room temperature. Hall measurements reveal a robust anomalous Hall effect persisting up to 300~K, with an anomalous Hall conductivity of $\sim 74$~S/cm that is nearly temperature independent. Scaling analysis demonstrates that the anomalous Hall response is dominated by the intrinsic Berry-curvature mechanism. First-principles calculations identify CoRuFeSi as a topologically nontrivial nodal-line semimetal in its ordered phase. Incorporation of experimentally relevant Co--Ru antisite disorder redistributes the Berry curvature and quantitatively reproduces the experimentally observed anomalous Hall conductivity, while preserving half-metallicity. These results establish CoRuFeSi as a disorder-tolerant half-metallic ferromagnet with a sizable intrinsic anomalous Hall effect at room temperature, highlighting its potential for spintronic and Hall-based device applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2601_12755 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Room temperature intrinsic anomalous Hall effect in disordered half-metallic ferromagnetic quaternary Heusler alloy CoRuFeSi Panda, Manikantha Pradhan, Sonali S. Mishra, Prabuddha Kant Bera, Alapan Roy, Rosni Mondal, Rajib Mukhopadhyay, Soumik Kanchana, V. Paramanik, Tapas Materials Science Quaternary Heusler alloys offer a versatile platform for engineering magnetic and topological transport phenomena through chemical flexibility and tunable disorder. Here, we report a comprehensive experimental and theoretical investigation of the magnetic, magnetotransport, and anomalous Hall properties of the quaternary Heusler alloy CoRuFeSi. The compound crystallizes in the LiMgPdSn-type structure with significant Co--Ru antisite disorder and exhibits soft ferromagnetism with a saturation magnetization of $4.21~μ_{\mathrm{B}}/\mathrm{f.u.}$ at low temperature and a Curie temperature well above room temperature. Hall measurements reveal a robust anomalous Hall effect persisting up to 300~K, with an anomalous Hall conductivity of $\sim 74$~S/cm that is nearly temperature independent. Scaling analysis demonstrates that the anomalous Hall response is dominated by the intrinsic Berry-curvature mechanism. First-principles calculations identify CoRuFeSi as a topologically nontrivial nodal-line semimetal in its ordered phase. Incorporation of experimentally relevant Co--Ru antisite disorder redistributes the Berry curvature and quantitatively reproduces the experimentally observed anomalous Hall conductivity, while preserving half-metallicity. These results establish CoRuFeSi as a disorder-tolerant half-metallic ferromagnet with a sizable intrinsic anomalous Hall effect at room temperature, highlighting its potential for spintronic and Hall-based device applications. |
| title | Room temperature intrinsic anomalous Hall effect in disordered half-metallic ferromagnetic quaternary Heusler alloy CoRuFeSi |
| topic | Materials Science |
| url | https://arxiv.org/abs/2601.12755 |