Beta-AlGaO/Ga2O3 Tri-Gate MOSHEMT with 70GHz fT and 55GHz fmax
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arXiv
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| Format: | Preprint |
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2026
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| _version_ | 1866918296501092352 |
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| author | Nipu, Noor Jahan Saha, Chinmoy Nath Singisetti, Uttam |
| author_facet | Nipu, Noor Jahan Saha, Chinmoy Nath Singisetti, Uttam |
| contents | We report Beta-AlGaO/Ga2O3 tri-gate heterostructure MOSHEMTs incorporating a thin 5 nm Al2O3 gate oxide layer for improved gate control and reduced leakage. The devices were fabricated on AlGaO/GaO heterostructures grown by ozone MBE on Fe-doped Ga2O3 (010) substrates. The tri-gate MOSHEMTs, with 1 micron-wide fins and Lg=155 nm, exhibit a peak current-gain cut-off frequency fT=70 GHz and a power-gain cut-off frequency fMAX=55 GHz.The fT.L product of 10.85 GHz-micron is the highest among reported Ga2O3 FETs to date. The devices show Vth =-0.5 V, an on/off ratio 10^6 I=80 mA/mm, a peak gm=60 mS/mm, and a low gate leakage current of 10^(-10) mA/mm at Vgs=0.5 V. Passivation with a 100 nm ALD Al2O3 layer effectively removes DC/RF dispersion and maintains stable operation under pulsed IV and repeated RF measurements. These results demonstrate the potential of tri-gate AlGaO/GaO MOSHEMTs for next-generation high-frequency and high-power applications. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2601_13215 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Beta-AlGaO/Ga2O3 Tri-Gate MOSHEMT with 70GHz fT and 55GHz fmax Nipu, Noor Jahan Saha, Chinmoy Nath Singisetti, Uttam Materials Science Mesoscale and Nanoscale Physics Applied Physics We report Beta-AlGaO/Ga2O3 tri-gate heterostructure MOSHEMTs incorporating a thin 5 nm Al2O3 gate oxide layer for improved gate control and reduced leakage. The devices were fabricated on AlGaO/GaO heterostructures grown by ozone MBE on Fe-doped Ga2O3 (010) substrates. The tri-gate MOSHEMTs, with 1 micron-wide fins and Lg=155 nm, exhibit a peak current-gain cut-off frequency fT=70 GHz and a power-gain cut-off frequency fMAX=55 GHz.The fT.L product of 10.85 GHz-micron is the highest among reported Ga2O3 FETs to date. The devices show Vth =-0.5 V, an on/off ratio 10^6 I=80 mA/mm, a peak gm=60 mS/mm, and a low gate leakage current of 10^(-10) mA/mm at Vgs=0.5 V. Passivation with a 100 nm ALD Al2O3 layer effectively removes DC/RF dispersion and maintains stable operation under pulsed IV and repeated RF measurements. These results demonstrate the potential of tri-gate AlGaO/GaO MOSHEMTs for next-generation high-frequency and high-power applications. |
| title | Beta-AlGaO/Ga2O3 Tri-Gate MOSHEMT with 70GHz fT and 55GHz fmax |
| topic | Materials Science Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2601.13215 |