Epitaxial thin film growth in the U-Ge binary system
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arXiv
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| Main Authors: | , , , , |
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| Format: | Preprint |
| Published: |
2026
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| _version_ | 1866918296559812608 |
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| author | Hussain, Syed Akbar Jasem, Ali A. M. H. Harding, Lottie M. Springell, Ross S. Bell, Christopher |
| author_facet | Hussain, Syed Akbar Jasem, Ali A. M. H. Harding, Lottie M. Springell, Ross S. Bell, Christopher |
| contents | We explore the U-Ge phase diagram using thin film growth by co-deposition of U and Ge via d.c. magnetron sputtering. Using three different single crystal substrates - MgO, CaF$_2$ and SrTiO$_3$ - we have stabilised mixed phase films of mostly UGe$_3$ and UGe, with evidence of UGe$_2$ as well. At higher temperatures UO$_2$ forms as a consequence of gettering of oxygen from several types of substrate. Several UGe$_3$ dominated samples grown on MgO substrates have also been characterised electrically, showing residual resistivity ratios up to six. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2601_13290 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Epitaxial thin film growth in the U-Ge binary system Hussain, Syed Akbar Jasem, Ali A. M. H. Harding, Lottie M. Springell, Ross S. Bell, Christopher Materials Science We explore the U-Ge phase diagram using thin film growth by co-deposition of U and Ge via d.c. magnetron sputtering. Using three different single crystal substrates - MgO, CaF$_2$ and SrTiO$_3$ - we have stabilised mixed phase films of mostly UGe$_3$ and UGe, with evidence of UGe$_2$ as well. At higher temperatures UO$_2$ forms as a consequence of gettering of oxygen from several types of substrate. Several UGe$_3$ dominated samples grown on MgO substrates have also been characterised electrically, showing residual resistivity ratios up to six. |
| title | Epitaxial thin film growth in the U-Ge binary system |
| topic | Materials Science |
| url | https://arxiv.org/abs/2601.13290 |