Intrinsic Negative-U Centers in Freestanding LaAlO3/SrTiO3 Micro-membranes

Fuente: arXiv
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Main Authors: Meucci, Giulia, Konstantinopoulou, Pinelopi O., Jansen, Thies, Nagda, Gunjan, Carrad, Damon J., Di Gennaro, Emiliano, Chen, Yu, Manca, Nicola, Bergeal, Nicolas, Bibes, Manuel, Kalaboukhov, Alexei, Salluzzo, Marco, Citro, Roberta, Trier, Felix, Pryds, Nini, Granozio, Fabio Miletto, Sambri, Alessia, Jespersen, Thomas S.
Format: Preprint
Published: 2026
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author Meucci, Giulia
Konstantinopoulou, Pinelopi O.
Jansen, Thies
Nagda, Gunjan
Carrad, Damon J.
Di Gennaro, Emiliano
Chen, Yu
Manca, Nicola
Bergeal, Nicolas
Bibes, Manuel
Kalaboukhov, Alexei
Salluzzo, Marco
Citro, Roberta
Trier, Felix
Pryds, Nini
Granozio, Fabio Miletto
Sambri, Alessia
Jespersen, Thomas S.
author_facet Meucci, Giulia
Konstantinopoulou, Pinelopi O.
Jansen, Thies
Nagda, Gunjan
Carrad, Damon J.
Di Gennaro, Emiliano
Chen, Yu
Manca, Nicola
Bergeal, Nicolas
Bibes, Manuel
Kalaboukhov, Alexei
Salluzzo, Marco
Citro, Roberta
Trier, Felix
Pryds, Nini
Granozio, Fabio Miletto
Sambri, Alessia
Jespersen, Thomas S.
contents The LaAlO3/SrTiO3 (LAO/STO) interface hosts a rich range of electronic phenomena, including unconventional electron pairing that in quantum dots gives rise to a negative effective charging energy U. Here, we show freestanding LAO/STO micro-membranes naturally hosting negative-U centers, where lateral confinement arises intrinsically, rather than from engineered nanostructures. These centers coexist with gate-tunable superconductivity and can remain stable upon thermal cycling from millikelvin temperatures to room temperature. Transport is in excellent agreement with calculations based on a negative-U Anderson model, and electrostatic simulations indicate characteristic center sizes of 20-80 nm. Our findings suggest that negative-U centers may arise from the intrinsic interfacial inhomogeneity typical of LAO/STO, and should therefore be considered a general feature of the LAO/STO interface. This could have important consequences for the microwave response of interfacial superconducting devices.
format Preprint
id arxiv_https___arxiv_org_abs_2601_13366
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Intrinsic Negative-U Centers in Freestanding LaAlO3/SrTiO3 Micro-membranes
Meucci, Giulia
Konstantinopoulou, Pinelopi O.
Jansen, Thies
Nagda, Gunjan
Carrad, Damon J.
Di Gennaro, Emiliano
Chen, Yu
Manca, Nicola
Bergeal, Nicolas
Bibes, Manuel
Kalaboukhov, Alexei
Salluzzo, Marco
Citro, Roberta
Trier, Felix
Pryds, Nini
Granozio, Fabio Miletto
Sambri, Alessia
Jespersen, Thomas S.
Materials Science
Mesoscale and Nanoscale Physics
The LaAlO3/SrTiO3 (LAO/STO) interface hosts a rich range of electronic phenomena, including unconventional electron pairing that in quantum dots gives rise to a negative effective charging energy U. Here, we show freestanding LAO/STO micro-membranes naturally hosting negative-U centers, where lateral confinement arises intrinsically, rather than from engineered nanostructures. These centers coexist with gate-tunable superconductivity and can remain stable upon thermal cycling from millikelvin temperatures to room temperature. Transport is in excellent agreement with calculations based on a negative-U Anderson model, and electrostatic simulations indicate characteristic center sizes of 20-80 nm. Our findings suggest that negative-U centers may arise from the intrinsic interfacial inhomogeneity typical of LAO/STO, and should therefore be considered a general feature of the LAO/STO interface. This could have important consequences for the microwave response of interfacial superconducting devices.
title Intrinsic Negative-U Centers in Freestanding LaAlO3/SrTiO3 Micro-membranes
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2601.13366