Alternative $ν+ν$-picture of bosonic fractional Chern insulators at high filling factors in multiple flat-band systems

Fuente: arXiv
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Autori principali: Wang, Licheng, Guan, Dong-Hao, He, Ai-Lei, Yu, Shun-Li, Zhou, Yuan
Natura: Preprint
Pubblicazione: 2026
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author Wang, Licheng
Guan, Dong-Hao
He, Ai-Lei
Yu, Shun-Li
Zhou, Yuan
author_facet Wang, Licheng
Guan, Dong-Hao
He, Ai-Lei
Yu, Shun-Li
Zhou, Yuan
contents Most fractional quantum Hall states have been traditionally identified within a single energy band, such as the lowest Landau level or topological flat band. As more particles are introduced, they inevitably populate higher energy bands. Whether the inclusion of multiple topological bands leads to new physics remains an open question. Here, we propose a universal picture applicable at higher filling factors $ν\geq 1$ in bosonic systems: the occupied bands tend to coalesce into an effective single topological band characterized by a total Chern number $\vert C\vert$, the sum of the Chern number of all occupied lower topological flat bands. Using a Kekulé lattice model with two lower flat bands featuring a total Chern number $C=1$, regardless of their specific configurations, we identify the emergence of a $\frac{1}{2}$ fractional Chern insulator (FCI) state at integer filling factor $ν=1$, followed by the Jain sequence states $\frac{2}{3}$ and $\frac{3}{4}$ at filling $ν=\frac{4}{3}$ and $\frac{6}{4}$. That is a $ν+ν$ picture, rather than the generally expected $1+ν^{\prime}$ picture, where $ν^{\prime}$ is the permitted FCI filling factor in the single second topological flat band. Our findings deepen the understanding of FCI states and open avenues for discovering exotic fractional topological phases in multiband systems.
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id arxiv_https___arxiv_org_abs_2601_13928
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Alternative $ν+ν$-picture of bosonic fractional Chern insulators at high filling factors in multiple flat-band systems
Wang, Licheng
Guan, Dong-Hao
He, Ai-Lei
Yu, Shun-Li
Zhou, Yuan
Strongly Correlated Electrons
Most fractional quantum Hall states have been traditionally identified within a single energy band, such as the lowest Landau level or topological flat band. As more particles are introduced, they inevitably populate higher energy bands. Whether the inclusion of multiple topological bands leads to new physics remains an open question. Here, we propose a universal picture applicable at higher filling factors $ν\geq 1$ in bosonic systems: the occupied bands tend to coalesce into an effective single topological band characterized by a total Chern number $\vert C\vert$, the sum of the Chern number of all occupied lower topological flat bands. Using a Kekulé lattice model with two lower flat bands featuring a total Chern number $C=1$, regardless of their specific configurations, we identify the emergence of a $\frac{1}{2}$ fractional Chern insulator (FCI) state at integer filling factor $ν=1$, followed by the Jain sequence states $\frac{2}{3}$ and $\frac{3}{4}$ at filling $ν=\frac{4}{3}$ and $\frac{6}{4}$. That is a $ν+ν$ picture, rather than the generally expected $1+ν^{\prime}$ picture, where $ν^{\prime}$ is the permitted FCI filling factor in the single second topological flat band. Our findings deepen the understanding of FCI states and open avenues for discovering exotic fractional topological phases in multiband systems.
title Alternative $ν+ν$-picture of bosonic fractional Chern insulators at high filling factors in multiple flat-band systems
topic Strongly Correlated Electrons
url https://arxiv.org/abs/2601.13928