Understanding Optical Anisotropy in Multilayer γ-InSe and ε-GaSe
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arXiv
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| Format: | Preprint |
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2026
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| author | Lynch, Jason Liu, Zexuan Krylyuk, Sergiy Zhang, Huairuo Davydov, Albert Jariwala, Deep |
| author_facet | Lynch, Jason Liu, Zexuan Krylyuk, Sergiy Zhang, Huairuo Davydov, Albert Jariwala, Deep |
| contents | Low-dimensional media have exhibited optical anisotropy that is unachievable in traditional 3D media due to the asymmetry of their strong, in-plane covalent bonds and weak out-of-plane van der Waals interactions. As a result, 2D media are promising building blocks for ultrathin devices such as polarimeters, polarized light sources, and active polarizers. III-VI semiconductors possess a rare property in the class of multilayered semiconductors, which is that their fundamental excitons are oriented out-of-plane. This allows them to exhibit phenomena such as transparency in the visible range while also being emissive in the visible and near-infrared ranges. Here, we report the first experimental values for the anisotropic refractive indices of γ-InSe and ε-GaSe, and we observe the effects of the out-of-plane excitons on the c-axis refractive index. It is found that both materials exhibit moderate optical anisotropy for multilayered semiconductors. The complex, anisotropic refractive index of γ-InSe and ε-GaSe enables the accurate simulation of these media, allowing for the design of high-performance, ultra-compact optoelectronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2601_13961 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Understanding Optical Anisotropy in Multilayer γ-InSe and ε-GaSe Lynch, Jason Liu, Zexuan Krylyuk, Sergiy Zhang, Huairuo Davydov, Albert Jariwala, Deep Optics Low-dimensional media have exhibited optical anisotropy that is unachievable in traditional 3D media due to the asymmetry of their strong, in-plane covalent bonds and weak out-of-plane van der Waals interactions. As a result, 2D media are promising building blocks for ultrathin devices such as polarimeters, polarized light sources, and active polarizers. III-VI semiconductors possess a rare property in the class of multilayered semiconductors, which is that their fundamental excitons are oriented out-of-plane. This allows them to exhibit phenomena such as transparency in the visible range while also being emissive in the visible and near-infrared ranges. Here, we report the first experimental values for the anisotropic refractive indices of γ-InSe and ε-GaSe, and we observe the effects of the out-of-plane excitons on the c-axis refractive index. It is found that both materials exhibit moderate optical anisotropy for multilayered semiconductors. The complex, anisotropic refractive index of γ-InSe and ε-GaSe enables the accurate simulation of these media, allowing for the design of high-performance, ultra-compact optoelectronic devices. |
| title | Understanding Optical Anisotropy in Multilayer γ-InSe and ε-GaSe |
| topic | Optics |
| url | https://arxiv.org/abs/2601.13961 |