Layer-engineered quantum anomalous Hall effect in twisted rhombohedral graphene family
Fuente:
arXiv
Guardado en:
| Autores principales: | , , , , , , , , , , , , , , , |
|---|---|
| Formato: | Preprint |
| Publicado: |
2026
|
| Materias: | |
| Acceso en línea: | |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| _version_ | 1866911387219918848 |
|---|---|
| author | Chen, Zhangyuan Liu, Naitian Hua, Jiannan Xiang, Hanxiao Zhou, Wenqiang Ding, Jing Fang, Xinjie Wu, Linfeng Zhang, Le Chen, Qianmei Chen, Xuanyu Watanabe, Kenji Taniguchi, Takashi Xin, Na Zhu, Wei Xu, Shuigang |
| author_facet | Chen, Zhangyuan Liu, Naitian Hua, Jiannan Xiang, Hanxiao Zhou, Wenqiang Ding, Jing Fang, Xinjie Wu, Linfeng Zhang, Le Chen, Qianmei Chen, Xuanyu Watanabe, Kenji Taniguchi, Takashi Xin, Na Zhu, Wei Xu, Shuigang |
| contents | The quantum anomalous Hall (QAH) insulator is uniquely characterized by the topological Chern number C. Controlling the Chern number is a key step toward functional topological electronics and enables access to exotic quantum phases beyond the traditional quantum Hall physics. Here, we report a series of QAH insulators in twisted rhombohedral graphene family, in which the Chern number can be tuned through layer configuration, in-situ electrostatic doping, and displacement field. Specifically, in twisted monolayer-rhombohedral N-layer graphene, denoted as (1+N) L, we observe QAH states with C=N at moire filling v=1, where N=3,4,5 represents the layer number of rhombohedral graphene. These results are experimentally confirmed by quantized Hall resistance and the Streda formula. In twisted monolayer-trilayer graphene, we also observe states with |C|=3 at v=3, whose sign can be switched by either electrostatic doping or displacement field. Furthermore, in twisted Bernal bilayer-rhombohedral tetralayer graphene denoted as (2+4) L, we demonstrate a displacement-field-driven topological phase transition between two distinct QAH states with C=3 and C=4 at v=1. Our work establishes twisted rhombohedral graphene as a highly versatile, layer-engineered platform for designing and dynamically controlling high-Chern-number topological matters. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2601_14014 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Layer-engineered quantum anomalous Hall effect in twisted rhombohedral graphene family Chen, Zhangyuan Liu, Naitian Hua, Jiannan Xiang, Hanxiao Zhou, Wenqiang Ding, Jing Fang, Xinjie Wu, Linfeng Zhang, Le Chen, Qianmei Chen, Xuanyu Watanabe, Kenji Taniguchi, Takashi Xin, Na Zhu, Wei Xu, Shuigang Mesoscale and Nanoscale Physics Materials Science Strongly Correlated Electrons The quantum anomalous Hall (QAH) insulator is uniquely characterized by the topological Chern number C. Controlling the Chern number is a key step toward functional topological electronics and enables access to exotic quantum phases beyond the traditional quantum Hall physics. Here, we report a series of QAH insulators in twisted rhombohedral graphene family, in which the Chern number can be tuned through layer configuration, in-situ electrostatic doping, and displacement field. Specifically, in twisted monolayer-rhombohedral N-layer graphene, denoted as (1+N) L, we observe QAH states with C=N at moire filling v=1, where N=3,4,5 represents the layer number of rhombohedral graphene. These results are experimentally confirmed by quantized Hall resistance and the Streda formula. In twisted monolayer-trilayer graphene, we also observe states with |C|=3 at v=3, whose sign can be switched by either electrostatic doping or displacement field. Furthermore, in twisted Bernal bilayer-rhombohedral tetralayer graphene denoted as (2+4) L, we demonstrate a displacement-field-driven topological phase transition between two distinct QAH states with C=3 and C=4 at v=1. Our work establishes twisted rhombohedral graphene as a highly versatile, layer-engineered platform for designing and dynamically controlling high-Chern-number topological matters. |
| title | Layer-engineered quantum anomalous Hall effect in twisted rhombohedral graphene family |
| topic | Mesoscale and Nanoscale Physics Materials Science Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2601.14014 |