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| Main Authors: | , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2601.14551 |
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| _version_ | 1866915744110870528 |
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| author | Zulu, Temazulu S. Little, Larissa B. Day, Aaron M. Zhang, Chaoshen Powell, Keith Baek, Kyeong-Yoon Fazlioglu-Yalcin, Benazir Sinclair, Neil Brooks, Charles M. Barton, David R. Loncar, Marko Mundy, Julia A. |
| author_facet | Zulu, Temazulu S. Little, Larissa B. Day, Aaron M. Zhang, Chaoshen Powell, Keith Baek, Kyeong-Yoon Fazlioglu-Yalcin, Benazir Sinclair, Neil Brooks, Charles M. Barton, David R. Loncar, Marko Mundy, Julia A. |
| contents | Thin film BaTiO$_3$ has one of the highest known Pockels coefficients (>1200 pm/V), making it an attractive material for use in electro-optic devices. It is advantageous to integrate BaTiO$_3$ on silicon to enable complementary metal-oxide-semiconductor (CMOS) compatible processing. However, synthesis of high-quality BaTiO$_3$ directly on silicon remains a challenge. Here, we synthesize BaTiO$_3$ using hybrid metal-organic molecular beam epitaxy (hMBE) and demonstrate its transfer onto silicon using thermocompression bonding and chemical lift-off. Hybrid metal-organic MBE enables self-regulated synthesis of highly stoichiometric thin films at high growth rates (>100nm/hr). Our transfer method results in millimeter-scale areas of atomically flat, crack-free BaTiO$_3$ making it a potentially scalable method. Finally, we demonstrate the applicability of our process to device fabrication through characterization of lithographically-patterned and etch-transferred sub-micron features. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2601_14551 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Heterogeneous Transfer of Thin Film BaTiO$_3$ onto Silicon for Device Fabrication Zulu, Temazulu S. Little, Larissa B. Day, Aaron M. Zhang, Chaoshen Powell, Keith Baek, Kyeong-Yoon Fazlioglu-Yalcin, Benazir Sinclair, Neil Brooks, Charles M. Barton, David R. Loncar, Marko Mundy, Julia A. Materials Science Thin film BaTiO$_3$ has one of the highest known Pockels coefficients (>1200 pm/V), making it an attractive material for use in electro-optic devices. It is advantageous to integrate BaTiO$_3$ on silicon to enable complementary metal-oxide-semiconductor (CMOS) compatible processing. However, synthesis of high-quality BaTiO$_3$ directly on silicon remains a challenge. Here, we synthesize BaTiO$_3$ using hybrid metal-organic molecular beam epitaxy (hMBE) and demonstrate its transfer onto silicon using thermocompression bonding and chemical lift-off. Hybrid metal-organic MBE enables self-regulated synthesis of highly stoichiometric thin films at high growth rates (>100nm/hr). Our transfer method results in millimeter-scale areas of atomically flat, crack-free BaTiO$_3$ making it a potentially scalable method. Finally, we demonstrate the applicability of our process to device fabrication through characterization of lithographically-patterned and etch-transferred sub-micron features. |
| title | Heterogeneous Transfer of Thin Film BaTiO$_3$ onto Silicon for Device Fabrication |
| topic | Materials Science |
| url | https://arxiv.org/abs/2601.14551 |