Exceptionally High Carrier Mobility in Hexagonal Diamond
Fuente:
arXiv
Salvato in:
| Autori principali: | , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2026
|
| Soggetti: | |
| Accesso online: | |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866910055782154240 |
|---|---|
| author | He, Zirui Gao, Shang-Peng Chen, Meng |
| author_facet | He, Zirui Gao, Shang-Peng Chen, Meng |
| contents | Hexagonal diamond (h-diamond), or Lonsdaleite, has been reported to be a wide-bandgap semiconductor with high thermal conductivity and hardness. Our \textit{ab initio} calculations reveal its exceptionally high carrier mobility at room temperature. Along $xy$ and $z$ directions, the hole mobilities are 5631 and 5552 cm$^{2}$V$^{-1}$s$^{-1}$, and the electron mobilities are 11462 and 28464 cm$^{2}$V$^{-1}$s$^{-1}$, respectively. These values are significantly superior to the mobility of most known semiconductors including cubic diamond. The small effective masses in h-diamond, comparable to those in cubic diamond, cannot explain its substantially higher mobility. Instead, two crucial mechanisms are uncovered: selection rules that considerably suppress hole scattering induced by transverse acoustic phonons, and a spatial decoupling effect where electronic wavefunctions concentrated in lattice interstitials lead to minimal overlap with scattering potentials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2601_15076 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Exceptionally High Carrier Mobility in Hexagonal Diamond He, Zirui Gao, Shang-Peng Chen, Meng Materials Science Hexagonal diamond (h-diamond), or Lonsdaleite, has been reported to be a wide-bandgap semiconductor with high thermal conductivity and hardness. Our \textit{ab initio} calculations reveal its exceptionally high carrier mobility at room temperature. Along $xy$ and $z$ directions, the hole mobilities are 5631 and 5552 cm$^{2}$V$^{-1}$s$^{-1}$, and the electron mobilities are 11462 and 28464 cm$^{2}$V$^{-1}$s$^{-1}$, respectively. These values are significantly superior to the mobility of most known semiconductors including cubic diamond. The small effective masses in h-diamond, comparable to those in cubic diamond, cannot explain its substantially higher mobility. Instead, two crucial mechanisms are uncovered: selection rules that considerably suppress hole scattering induced by transverse acoustic phonons, and a spatial decoupling effect where electronic wavefunctions concentrated in lattice interstitials lead to minimal overlap with scattering potentials. |
| title | Exceptionally High Carrier Mobility in Hexagonal Diamond |
| topic | Materials Science |
| url | https://arxiv.org/abs/2601.15076 |