Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm^2/(Vs)
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arXiv
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| Autores principales: | , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2026
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| _version_ | 1866908892654469120 |
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| author | Martz-Oberlander, T. J. Bulgaru, B. Berkson-Korenberg, Z. Hawkins, Q. West, K. W. Baldwin, K. W. Gupta, A. Pfeiffer, L. N. Gervais, G. |
| author_facet | Martz-Oberlander, T. J. Bulgaru, B. Berkson-Korenberg, Z. Hawkins, Q. West, K. W. Baldwin, K. W. Gupta, A. Pfeiffer, L. N. Gervais, G. |
| contents | We report the fabrication and operation of a source-drain-gate three-terminal field-effect electronic device with an electron mobility exceeding $40\times 10^6$ cm$^2$ / (Vs). Several devices were fabricated, with the highest achieved electron mobility obtained using a symmetrically-doped GaAs/AlGaAs quantum well forming a two-dimensional electron gas (2DEG) with a density of $1.47(1) \times 10^{11}$ cm$^{-2}$ and a pristine, pre-fabrication electron mobility of $44(2) \times 10^6$ cm$^2$/(\text{Vs}). To circumvent the well-known degradation of electron mobility during fabrication, devices were fabricated using a flip-chip technique where all lithographic processing steps were performed on a separate sapphire substrate. This method demonstrates the successful operation of various gate assembly designs on distinct 2DEGs without observable mobility degradation. This advance doubles the previous record for field-effect electronic device mobility and enables access to new regimes of quantum transport and applications that were previously unfathomable due to mobility limitations. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2601_15418 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm^2/(Vs) Martz-Oberlander, T. J. Bulgaru, B. Berkson-Korenberg, Z. Hawkins, Q. West, K. W. Baldwin, K. W. Gupta, A. Pfeiffer, L. N. Gervais, G. Mesoscale and Nanoscale Physics Materials Science Strongly Correlated Electrons We report the fabrication and operation of a source-drain-gate three-terminal field-effect electronic device with an electron mobility exceeding $40\times 10^6$ cm$^2$ / (Vs). Several devices were fabricated, with the highest achieved electron mobility obtained using a symmetrically-doped GaAs/AlGaAs quantum well forming a two-dimensional electron gas (2DEG) with a density of $1.47(1) \times 10^{11}$ cm$^{-2}$ and a pristine, pre-fabrication electron mobility of $44(2) \times 10^6$ cm$^2$/(\text{Vs}). To circumvent the well-known degradation of electron mobility during fabrication, devices were fabricated using a flip-chip technique where all lithographic processing steps were performed on a separate sapphire substrate. This method demonstrates the successful operation of various gate assembly designs on distinct 2DEGs without observable mobility degradation. This advance doubles the previous record for field-effect electronic device mobility and enables access to new regimes of quantum transport and applications that were previously unfathomable due to mobility limitations. |
| title | Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm^2/(Vs) |
| topic | Mesoscale and Nanoscale Physics Materials Science Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2601.15418 |