Quantum Hall Effect at 0.002T
Fuente:
arXiv
Enregistré dans:
| Auteurs principaux: | , , , , , , , , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Publié: |
2026
|
| Sujets: | |
| Accès en ligne: | |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| _version_ | 1866917545771008000 |
|---|---|
| author | Mayorov, Alexander S. Wang, Ping Yue, Xiaokai Wu, Biao He, Jianhong Zhang, Di Lian, Fuzhuo Jiang, Siqi Huang, Jiabei Wang, Zihao Guo, Qian Watanabe, Kenji Taniguchi, Takashi Du, Renjun Wang, Rui Wang, Baigeng Wang, Lei Novoselov, Kostya S. Yu, Geliang |
| author_facet | Mayorov, Alexander S. Wang, Ping Yue, Xiaokai Wu, Biao He, Jianhong Zhang, Di Lian, Fuzhuo Jiang, Siqi Huang, Jiabei Wang, Zihao Guo, Qian Watanabe, Kenji Taniguchi, Takashi Du, Renjun Wang, Rui Wang, Baigeng Wang, Lei Novoselov, Kostya S. Yu, Geliang |
| contents | Graphene enables precise carrier-density control via gating, making it an ideal platform for studying electronic interactions. However, sample inhomogeneities often limit access to the low-density regimes where these interactions dominate. Enhancing carrier mobility is therefore crucial for exploring fundamental properties and developing device applications. Here, we demonstrate a significant reduction in external inhomogeneity using a double-layer graphene architecture separated by an ultra-thin hexagonal boron nitride layer. Mutual screening between the layers reduces scattering from random Coulomb potentials, resulting in a quantum mobility exceeding. Shubnikov de-Haas oscillations emerge at magnetic fields below 1 mT, while integer quantum Hall features are observed at 0.002T. Furthermore, we identify a fractional quantum Hall plateau at a filling factor of at 2T. These results demonstrate the platform's suitability for investigating strongly correlated electronic phases in graphene-based heterostructures. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2601_16015 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Quantum Hall Effect at 0.002T Mayorov, Alexander S. Wang, Ping Yue, Xiaokai Wu, Biao He, Jianhong Zhang, Di Lian, Fuzhuo Jiang, Siqi Huang, Jiabei Wang, Zihao Guo, Qian Watanabe, Kenji Taniguchi, Takashi Du, Renjun Wang, Rui Wang, Baigeng Wang, Lei Novoselov, Kostya S. Yu, Geliang Mesoscale and Nanoscale Physics Quantum Physics Graphene enables precise carrier-density control via gating, making it an ideal platform for studying electronic interactions. However, sample inhomogeneities often limit access to the low-density regimes where these interactions dominate. Enhancing carrier mobility is therefore crucial for exploring fundamental properties and developing device applications. Here, we demonstrate a significant reduction in external inhomogeneity using a double-layer graphene architecture separated by an ultra-thin hexagonal boron nitride layer. Mutual screening between the layers reduces scattering from random Coulomb potentials, resulting in a quantum mobility exceeding. Shubnikov de-Haas oscillations emerge at magnetic fields below 1 mT, while integer quantum Hall features are observed at 0.002T. Furthermore, we identify a fractional quantum Hall plateau at a filling factor of at 2T. These results demonstrate the platform's suitability for investigating strongly correlated electronic phases in graphene-based heterostructures. |
| title | Quantum Hall Effect at 0.002T |
| topic | Mesoscale and Nanoscale Physics Quantum Physics |
| url | https://arxiv.org/abs/2601.16015 |