From many valleys to many topological phases - quantum anomalous Hall effect in IV-VI semiconductor quantum wells
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arXiv
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| Format: | Preprint |
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2026
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| _version_ | 1866912841778331648 |
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| author | Majewski, Szymon Wierzbicki, Michał Dietl, Tomasz |
| author_facet | Majewski, Szymon Wierzbicki, Michał Dietl, Tomasz |
| contents | Consistent with prior qualitative expectations for group IV-VI topological crystalline insulators, this work demonstrates, based on band structure and Chern number calculations, that Pb$_{1-x}$Sn$_x$Se/(PbSe)$_{1-y}$(EuS)$_y$ quantum wells constitute a promising and viable platform for realizing a variety of quantum anomalous Hall phases. The proposed basis transformation procedure for the multiband $\mathit{k} \cdot \mathit{p}$ Hamiltonian enables the treatment of wells grown along arbitrary crystallographic directions while explicitly accounting for the anisotropy of the material's isoenergetic surfaces. Numerical studies of $\langle 111\rangle$-, $\langle 110\rangle$- and $\langle 001\rangle$-oriented quantum wells predict attainable Chern numbers with magnitudes ranging from $1$ to $4$, depending on the quantum well width, Sn content, and relative orientation of the four projected $\mathrm{L}$ valleys with respect to the growth direction. The results further indicate that appropriate strain compensation is required to achieve high-quality quantization of the Hall conductance. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2601_16137 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | From many valleys to many topological phases - quantum anomalous Hall effect in IV-VI semiconductor quantum wells Majewski, Szymon Wierzbicki, Michał Dietl, Tomasz Mesoscale and Nanoscale Physics Consistent with prior qualitative expectations for group IV-VI topological crystalline insulators, this work demonstrates, based on band structure and Chern number calculations, that Pb$_{1-x}$Sn$_x$Se/(PbSe)$_{1-y}$(EuS)$_y$ quantum wells constitute a promising and viable platform for realizing a variety of quantum anomalous Hall phases. The proposed basis transformation procedure for the multiband $\mathit{k} \cdot \mathit{p}$ Hamiltonian enables the treatment of wells grown along arbitrary crystallographic directions while explicitly accounting for the anisotropy of the material's isoenergetic surfaces. Numerical studies of $\langle 111\rangle$-, $\langle 110\rangle$- and $\langle 001\rangle$-oriented quantum wells predict attainable Chern numbers with magnitudes ranging from $1$ to $4$, depending on the quantum well width, Sn content, and relative orientation of the four projected $\mathrm{L}$ valleys with respect to the growth direction. The results further indicate that appropriate strain compensation is required to achieve high-quality quantization of the Hall conductance. |
| title | From many valleys to many topological phases - quantum anomalous Hall effect in IV-VI semiconductor quantum wells |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2601.16137 |