Thermally-Activated Epitaxy of NbO
Fuente:
arXiv
Salvato in:
| Autori principali: | , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2026
|
| Soggetti: | |
| Accesso online: | |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866917400869339136 |
|---|---|
| author | Glotzer, Sandra Kim, Jeong Rae Falson, Joseph |
| author_facet | Glotzer, Sandra Kim, Jeong Rae Falson, Joseph |
| contents | We demonstrate a thermally-activated epitaxy window for the growth of NbO at temperatures exceeding 1000 $^o$C. NbO films grown in this mode display superior structural and transport properties, which are reproducible across a window of oxygen partial pressure. Through comprehensive analysis, we propose the prototypical electrical properties of NbO, for which a consensus has not yet been made. This study unequivocally demonstrates the utility of high temperatures in the thin film synthesis of refractory metal compounds. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2601_16313 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Thermally-Activated Epitaxy of NbO Glotzer, Sandra Kim, Jeong Rae Falson, Joseph Materials Science Superconductivity We demonstrate a thermally-activated epitaxy window for the growth of NbO at temperatures exceeding 1000 $^o$C. NbO films grown in this mode display superior structural and transport properties, which are reproducible across a window of oxygen partial pressure. Through comprehensive analysis, we propose the prototypical electrical properties of NbO, for which a consensus has not yet been made. This study unequivocally demonstrates the utility of high temperatures in the thin film synthesis of refractory metal compounds. |
| title | Thermally-Activated Epitaxy of NbO |
| topic | Materials Science Superconductivity |
| url | https://arxiv.org/abs/2601.16313 |