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Hauptverfasser: Snedker-Nielsen, Arnulf J., Gongora, David R., Madsen, Magnus L., Christiansen, Christian H., Piehorsch, Eike L., Augustesen, Mathias Ø., Memisevic, Elvedin, Kallatt, Sangeeth, Thomas, Rodrigo A., Svendsen, Mark Kamper, Jeppesen, Peter Krogstrup, Bathen, Marianne E., Vines, Lasse, Granum, Peter, Paesani, Stefano
Format: Preprint
Veröffentlicht: 2026
Schlagworte:
Online-Zugang:https://arxiv.org/abs/2601.17919
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author Snedker-Nielsen, Arnulf J.
Gongora, David R.
Madsen, Magnus L.
Christiansen, Christian H.
Piehorsch, Eike L.
Augustesen, Mathias Ø.
Memisevic, Elvedin
Kallatt, Sangeeth
Thomas, Rodrigo A.
Svendsen, Mark Kamper
Jeppesen, Peter Krogstrup
Bathen, Marianne E.
Vines, Lasse
Granum, Peter
Paesani, Stefano
author_facet Snedker-Nielsen, Arnulf J.
Gongora, David R.
Madsen, Magnus L.
Christiansen, Christian H.
Piehorsch, Eike L.
Augustesen, Mathias Ø.
Memisevic, Elvedin
Kallatt, Sangeeth
Thomas, Rodrigo A.
Svendsen, Mark Kamper
Jeppesen, Peter Krogstrup
Bathen, Marianne E.
Vines, Lasse
Granum, Peter
Paesani, Stefano
contents Colour centres in silicon have great potential as single photon sources for quantum technologies. Some of them - like the T centre - also possess optically-active spins that enable spin-photon interfaces for generating entangled photons and multi-spin registers. This paper explores the generation of several types of colour centres in silicon for mass-manufacturable silicon-on-insulator quantum devices. We investigate how different processes in the device development affect the presence of the quantum emitters, including thermal annealing and fabrication steps for optical nanostructures. The study reveals coupled formation dynamics between different colour centres, identifies optimal parameters for annealing processes, and reports on the sensitivity to annealing duration and nanofabrication procedures for photonic integrated circuits. Furthermore, we discern stable optical signals from colour centres in silicon which have not been identified before.
format Preprint
id arxiv_https___arxiv_org_abs_2601_17919
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Colour Centre Formation in Silicon-On-Insulator for On-Chip Photonic Integration
Snedker-Nielsen, Arnulf J.
Gongora, David R.
Madsen, Magnus L.
Christiansen, Christian H.
Piehorsch, Eike L.
Augustesen, Mathias Ø.
Memisevic, Elvedin
Kallatt, Sangeeth
Thomas, Rodrigo A.
Svendsen, Mark Kamper
Jeppesen, Peter Krogstrup
Bathen, Marianne E.
Vines, Lasse
Granum, Peter
Paesani, Stefano
Quantum Physics
Materials Science
Colour centres in silicon have great potential as single photon sources for quantum technologies. Some of them - like the T centre - also possess optically-active spins that enable spin-photon interfaces for generating entangled photons and multi-spin registers. This paper explores the generation of several types of colour centres in silicon for mass-manufacturable silicon-on-insulator quantum devices. We investigate how different processes in the device development affect the presence of the quantum emitters, including thermal annealing and fabrication steps for optical nanostructures. The study reveals coupled formation dynamics between different colour centres, identifies optimal parameters for annealing processes, and reports on the sensitivity to annealing duration and nanofabrication procedures for photonic integrated circuits. Furthermore, we discern stable optical signals from colour centres in silicon which have not been identified before.
title Colour Centre Formation in Silicon-On-Insulator for On-Chip Photonic Integration
topic Quantum Physics
Materials Science
url https://arxiv.org/abs/2601.17919